Discrete Semiconductor Products\Transistors - Bipolar (BJT) - SingleБиполярный (BJT) транзистор NPN 400V 1.5A 2.1W Through Hole TO-92-3

Подробное описание

Вес и габариты
current - collector cutoff (max)	100ВµA
current - collector (ic) (max)	1.5A
dc current gain (hfe) (min) @ ic, vce	5 @ 1A, 2V

110 ₽

– +

Бонус: 2.2 !

Бонусная программа

Итого: 110 ₽

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Discrete Semiconductor Products\Transistors - Bipolar (BJT) - SingleБиполярный (BJT) транзистор NPN 400V 1.5A 2.1W Through Hole TO-92-3

Вес и габариты
current - collector cutoff (max)	100ВµA
current - collector (ic) (max)	1.5A
dc current gain (hfe) (min) @ ic, vce	5 @ 1A, 2V
eccn	EAR99
htsus	8541.29.0095
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Through Hole
operating temperature	150В°C (TJ)
package	Bulk
package / case	TO-226-3, TO-92-3 (TO-226AA)
power - max	2.1W
rohs status	RoHS Compliant
supplier device package	TO-92-3
transistor type	NPN
vce saturation (max) @ ib, ic	1.5V @ 500mA, 1.5A
voltage - collector emitter breakdown (max)	400V

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Кнопки

PHD13003C,412