Name: PBSS8110D,115, 100V 700mW 150@250mA,10V 1A NPN SOT457 Bipolar Transistors BJT ROHS
Brand: Nexperia B.V.
SKU: PBSS8110D,115

Электронные компоненты Транзисторы Биполярные (BJTs) Nexperia PBSS8110D,115, 100V 700mW 150@250mA,10V 1A ...

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Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJTБиполярный (BJT) транзистор NPN 100V 1A 100MHz 700mW Surface Mount 6-TSOP

Дата загрузки	21.02.2024
Вес и габариты
вес, г	0.02
Информация о производителе
Производитель	Nexperia B.V.
Бренд	Nexperia B.V.
Основные
base product number	PBSS8110 ->
collector- base voltage vcbo	120 V
collector- emitter voltage vceo max	100 V
configuration	Single
current - collector cutoff (max)	100nA
current - collector (ic) (max)	1A
dc current gain (hfe) (min) @ ic, vce	150 @ 250mA, 10V
eccn	EAR99
emitter- base voltage vebo	5 V
factory pack quantity	3000
frequency - transition	100MHz
gain bandwidth product ft	100 MHz
htsus	8541.21.0075
категория	Электронные компоненты/Транзисторы
manufacturer	Nexperia
maximum dc collector current	1 A
maximum operating temperature	+150 C
minimum operating temperature	-65 C
moisture sensitivity level (msl)	1 (Unlimited)
mounting style	SMD/SMT
mounting type	Surface Mount
operating temperature	150В°C (TJ)
package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
package / case	TSOP-6
packaging	Cut Tape or Reel
партномер	8009637204
part # aliases	PBSS8110D T/R
pd - power dissipation	700 mW
power - max	700mW
product category	Bipolar Transistors-BJT
product type	BJTs-Bipolar Transistors
qualification	AEC-Q101
reach status	REACH Unaffected
rohs status	ROHS3 Compliant
subcategory	Transistors
supplier device package	6-TSOP
transistor polarity	NPN
transistor type	NPN
vce saturation (max) @ ib, ic	200mV @ 100mA, 1A
voltage - collector emitter breakdown (max)	100V
Время загрузки	15:10:50

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