Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJTБиполярный (BJT) транзистор PNP 50V 3A 100MHz 1.6W Surface Mount SOT-89

Подробное описание

Вес и габариты
base product number	PBSS5350 ->
collector- base voltage vcbo	50 V
collector- emitter voltage vceo max	-50 V

26 ₽

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Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJTБиполярный (BJT) транзистор PNP 50V 3A 100MHz 1.6W Surface Mount SOT-89

Вес и габариты
base product number	PBSS5350 ->
collector- base voltage vcbo	50 V
collector- emitter voltage vceo max	-50 V
configuration	Single
continuous collector current	-3 A
current - collector cutoff (max)	100nA
current - collector (ic) (max)	3A
dc collector/base gain hfe min	200
dc current gain hfe max	200 at 100 mA, 2 V
dc current gain (hfe) (min) @ ic, vce	200 @ 1A, 2V
eccn	EAR99
emitter- base voltage vebo	-5 V
factory pack quantity	4000
frequency - transition	100MHz
gain bandwidth product ft	100 MHz
htsus	8541.29.0075
manufacturer	Nexperia
maximum dc collector current	-5 A
maximum operating temperature	+150 C
minimum operating temperature	-65 C
moisture sensitivity level (msl)	1 (Unlimited)
mounting style	SMD/SMT
mounting type	Surface Mount
operating temperature	150В°C (TJ)
package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
package / case	TO-243-3
packaging	Cut Tape or Reel
part # aliases	/T3 PBSS5350X
pd - power dissipation	550 mW
power - max	1.6W
product category	Bipolar Transistors-BJT
product type	BJTs-Bipolar Transistors
qualification	AEC-Q101
reach status	REACH Unaffected
rohs status	ROHS3 Compliant
subcategory	Transistors
supplier device package	SOT-89
transistor polarity	PNP
transistor type	PNP
vce saturation (max) @ ib, ic	390mV @ 300mA, 3A
voltage - collector emitter breakdown (max)	50V

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PBSS5350X,135