PBSS4041NT,215, Bipolar Transistors - BJT PBSS4041NT/SOT23/TO-236AB

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Артикул: PBSS4041NT,215
Электронные компоненты Транзисторы Биполярные (BJTs) Nexperia PBSS4041NT,215, Bipolar Transistors - BJT ...
Nexperia B.V.
Дата загрузки21.02.2024
Вес и габариты
вес, г0.01
Информация о производителе
ПроизводительNexperia B.V.
БрендNexperia B.V.
110
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Бонус: 2.2 !
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Итого: 110
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Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJTBISS Transistors NXP Semiconductors low V CE sat BISS (Breakthrough in Small Signal) transistors are best-in-class devices that set a new benchmark for minimizing on-state resistance and switching times. The NXP Semiconductors 4021 and 4041 BISS transistors deliver low-loss load switching performance comparable to products twice their size. The 4032 BISS transistors are optimized for high-speed switching applications. NXP Semiconductors BISS transistors deliver high electrical performance (I C and I CM ) in less space and high energy efficiency with less heat generation. These NXP devices are suitable for use in automobiles, with AEC-Q101 qualification.
Дата загрузки21.02.2024
Вес и габариты
вес, г0.01
Информация о производителе
ПроизводительNexperia B.V.
БрендNexperia B.V.
Основные
automotiveYes
collector- base voltage vcbo:80 V
collector-emitter saturation voltage:200 mV, 250 mV
collector- emitter voltage vceo max:60 V
configurationSingle
configuration:Dual
continuous collector current:1 A, -900 mA
dc collector/base gain hfe min:30
dc current gain hfe max:250 at 1 mA, 5 V
eccn (us)EAR99
emitter- base voltage vebo:5 V
eu rohsCompliant
factory pack quantity: factory pack quantity:3000
gain bandwidth product ft:220 MHz, 185 MHz
категорияЭлектронные компоненты/Транзисторы
lead shapeGull-wing
manufacturer:Nexperia
maximum base current (a)1
maximum base emitter saturation voltage (v)1.05@100mA@1A|1.2@300mA@3A|1.3@400mA@4A
maximum collector base voltage60 V
maximum collector base voltage (v)60
maximum collector cut-off current (na)100
maximum collector emitter voltage60 V
maximum collector-emitter voltage (v)60
maximum dc collector current3.8 A
maximum dc collector current:1 A, 900 mA
maximum dc collector current (a)03.08.2024
maximum emitter base voltage5 V
maximum emitter base voltage (v)5
maximum operating frequency100 MHz
maximum operating temperature+150 °C
maximum operating temperature:+150 C
maximum operating temperature (°c)150
maximum power dissipation1.1 W
maximum power dissipation (mw)1100
minimum dc current gain300
minimum operating temperature:-65 C
minimum operating temperature (°c)-55
mountingSurface Mount
mounting style:SMD/SMT
mounting typeSurface Mount
number of elements per chip1
operating junction temperature (°c)150
package / case:TSOP-6
package typeSOT-23
packagingTape and Reel
партномер8006244071
part # aliases:9,34063E+11
part statusActive
pcb changed3
pd - power dissipation:290 mW, 420 mW
pin count3
ppapUnknown
product categoryBipolar Small Signal
product category:Bipolar Transistors-BJT
product type:BJTs-Bipolar Transistors
qualification:AEC-Q101
standard package nameSOT
subcategory:Transistors
supplier packageSOT-23
supplier temperature gradeAutomotive
technology:Si
transistor configurationSingle
transistor polarity:NPN, PNP
transistor typeNPN
typeNPN
Время загрузки23:00:11
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