Name: PBSS2515VPN,115, Bipolar Transistors - BJT PBSS2515VPN/SOT666/SOT6
SKU: PBSS2515VPN,115

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

Подробное описание

Вес и габариты
collector- base voltage vcbo:	15 V
collector-emitter saturation voltage:	250 mV
collector- emitter voltage vceo max:	15 V

120 ₽

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Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

Вес и габариты
collector- base voltage vcbo:	15 V
collector-emitter saturation voltage:	250 mV
collector- emitter voltage vceo max:	15 V
configuration:	Dual
dc current gain hfe max:	200 at 10 mA, 2 V
emitter- base voltage vebo:	6 V
factory pack quantity: factory pack quantity:	4000
gain bandwidth product ft:	420 MHz, 280 MHz
manufacturer:	Nexperia
maximum dc collector current:	500 mA
maximum operating temperature:	+150 C
minimum operating temperature:	-65 C
mounting style:	SMD/SMT
package/case:	SOT-666-6
packaging:	Reel, Cut Tape, MouseReel
part # aliases:	934056713115
pd - power dissipation:	300 mW
product category:	Bipolar Transistors-BJT
product type:	BJTs-Bipolar Transistors
qualification:	AEC-Q101
subcategory:	Transistors
technology:	Si
transistor polarity:	NPN, PNP
вес, г	0.01

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