Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

Подробное описание

Вес и габариты
automotive	No
collector- base voltage vcbo	-40 V
collector-emitter saturation voltage	-0.3 V

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Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

Вес и габариты
automotive	No
collector- base voltage vcbo	-40 V
collector-emitter saturation voltage	-0.3 V
collector- emitter voltage vceo max	-40 V
configuration	Single
continuous collector current	-0.2 A
dc current gain hfe max	300
eccn (us)	EAR99
emitter- base voltage vebo	-5 V
eu rohs	Compliant
factory pack quantity	3000
gain bandwidth product ft	300 MHz
hts	8541.10.00.50
manufacturer	Diodes Incorporated
maximum base emitter saturation voltage (v)	0.95@5mA@50mA\|0.85@1mA@10mA
maximum collector base voltage (v)	40
maximum collector-emitter saturation voltage (v)	0.3@5mA@50mA\|0.2@1mA@10mA
maximum collector-emitter voltage (v)	40
maximum dc collector current	0.2 A
maximum dc collector current (a)	0.2
maximum emitter base voltage (v)	5
maximum operating temperature	+150 C
maximum operating temperature (°c)	150
maximum power dissipation (mw)	200
maximum transition frequency (mhz)	300(Min)
military	No
minimum dc current gain	60@50mA@1V\|60@0.1mA@1V\|100@10mA@1V\|80@1mA@1V\|30@100mA@1V
minimum operating temperature	-55 C
minimum operating temperature (°c)	-55
mounting	Surface Mount
mounting style	SMD/SMT
number of elements per chip	1
package / case	SOT-323-3
package height	0.95
package length	2.15
package width	1.3
packaging	Cut Tape or Reel
part status	Active
pcb changed	3
pd - power dissipation	200 mW
pin count	3
product category	Bipolar Transistors-BJT
product type	BJTs-Bipolar Transistors
series	MMST39
standard package name	SOT-323
subcategory	Transistors
supplier package	SOT-323
transistor polarity	PNP
type	PNP
вес, г	0.01

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MMST3906-7-F