Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

Подробное описание

Вес и габариты
collector- base voltage vcbo	60 V
collector- emitter voltage vceo max	40 V
configuration	Single

66 ₽

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Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

Вес и габариты
collector- base voltage vcbo	60 V
collector- emitter voltage vceo max	40 V
configuration	Single
dc collector/base gain hfe min	40
emitter- base voltage vebo	6 V
factory pack quantity	3000
gain bandwidth product ft	300 MHz
manufacturer	Micro Commercial Components(MCC)
maximum dc collector current	0.2 A
maximum operating temperature	+150 C
minimum operating temperature	-55 C
mounting style	SMD/SMT
package / case	SOT-323-3
packaging	Cut Tape or Reel
pd - power dissipation	200 mW
product category	Bipolar Transistors-BJT
product type	BJTs-Bipolar Transistors
series	MMST39
subcategory	Transistors
transistor polarity	NPN

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Кнопки

MMST3904-TP