Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJTTrans GP BJT PNP 40V 0.6A 200mW 6-Pin SOT-363 T/R

Подробное описание

Вес и габариты
automotive	No
collector- base voltage vcbo	-40 V
collector-emitter saturation voltage	-0.75 V

23 ₽

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Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJTTrans GP BJT PNP 40V 0.6A 200mW 6-Pin SOT-363 T/R

Вес и габариты
automotive	No
collector- base voltage vcbo	-40 V
collector-emitter saturation voltage	-0.75 V
collector- emitter voltage vceo max	-40 V
configuration	Dual
continuous collector current	-0.6 A
dc current gain hfe max	300
eccn (us)	EAR99
emitter- base voltage vebo	-5 V
eu rohs	Compliant
factory pack quantity	3000
gain bandwidth product ft	200 MHz
lead shape	Gull-wing
manufacturer	Diodes Incorporated
maximum base emitter saturation voltage (v)	0.95 15mA 150mA\|1.3 50mA 500mA
maximum collector base voltage (v)	40
maximum collector-emitter saturation voltage (v)	0.75 50mA 500mA\|0.4 15mA 150mA
maximum collector-emitter voltage (v)	40
maximum dc collector current	0.6 A
maximum dc collector current (a)	0.6
maximum emitter base voltage (v)	5
maximum operating temperature	+150 C
maximum operating temperature (°c)	150
maximum power dissipation (mw)	200
maximum transition frequency (mhz)	200(Min)
minimum operating temperature	-55 C
minimum operating temperature (°c)	-55
mounting	Surface Mount
mounting style	SMD/SMT
number of elements per chip	2
package / case	SOT-363-6
packaging	Cut Tape or Reel
part status	Active
pcb changed	6
pd - power dissipation	200 mW
pin count	6
ppap	No
product category	Bipolar Transistors-BJT
product type	BJTs-Bipolar Transistors
series	MMDT44
standard package name	SOT-26
subcategory	Transistors
supplier package	SOT-363
transistor polarity	PNP
type	PNP
вес, г	0.01

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MMDT4403-7-F