MMBTA56LT3G, Trans GP BJT PNP 80V 0.5A 300mW 3-Pin SOT-23 T/R
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Артикул: MMBTA56LT3G
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Diodes, Transistors and Thyristors\Bipolar Transistors\GP BJTTrans GP BJT PNP 80V 0.5A 300mW 3-Pin SOT-23 T/R
Дата загрузки | 20.02.2024 |
Вес и габариты | |
вес, г | 1 |
Информация о производителе | |
Производитель | ON Semiconductor*** |
Бренд | ON Semiconductor*** |
Основные | |
automotive | No |
collector- base voltage vcbo | -80 V |
collector- base voltage vcbo: | -80 V |
collector-emitter saturation voltage | -0.25 V |
collector-emitter saturation voltage: | -250 mV |
collector- emitter voltage vceo max | -80 V |
collector- emitter voltage vceo max: | -80 V |
configuration | Single |
configuration: | Single |
continuous collector current | -0.5 A |
continuous collector current: | -0.5 A |
eccn (us) | EAR99 |
emitter- base voltage vebo | 4 V |
emitter- base voltage vebo: | -4 V |
eu rohs | Compliant |
factory pack quantity | 10000 |
factory pack quantity: factory pack quantity: | 10000 |
gain bandwidth product ft | 50 MHz |
gain bandwidth product ft: | 50 MHz |
категория | Электронные компоненты/Транзисторы |
lead shape | Gull-wing |
manufacturer | ON Semiconductor |
manufacturer: | onsemi |
material | Si |
maximum collector base voltage (v) | 80 |
maximum collector cut-off current (na) | 100 |
maximum collector-emitter saturation voltage (v) | 0.25@10mA@100mA |
maximum collector-emitter voltage (v) | 80 |
maximum dc collector current | 0.5 A |
maximum dc collector current: | -500 mA |
maximum dc collector current (a) | 0.5 |
maximum emitter base voltage (v) | 4 |
maximum operating temperature | +150 C |
maximum operating temperature: | +150 C |
maximum operating temperature (°c) | 150 |
maximum power dissipation (mw) | 300 |
maximum transition frequency (mhz) | 50(Min) |
minimum dc current gain | 100@100mA@1V|100@10mA@1V |
minimum operating temperature | -55 C |
minimum operating temperature: | -55 C |
minimum operating temperature (°c) | -55 |
mounting | Surface Mount |
mounting style | SMD/SMT |
mounting style: | SMD/SMT |
number of elements per chip | 1 |
operating junction temperature (°c) | -55 to 150 |
package / case | SOT-23-3 |
package/case: | SOT-23-3 |
packaging | Tape and Reel |
партномер | 8001145019 |
part status | Active |
pcb changed | 3 |
pd - power dissipation | 225 mW |
pd - power dissipation: | 225 mW |
pin count | 3 |
ppap | No |
product category | Bipolar Small Signal |
product category: | Bipolar Transistors-BJT |
product type | BJTs-Bipolar Transistors |
product type: | BJTs-Bipolar Transistors |
series | MMBTA56L |
series: | MMBTA56L |
standard package name | SOT |
subcategory | Transistors |
subcategory: | Transistors |
supplier package | SOT-23 |
technology: | Si |
transistor polarity | PNP |
transistor polarity: | PNP |
type | PNP |
Время загрузки | 0:18:03 |
Отзывов нет
Компания ООО "Телеметрия"
- Название организации: ООО "ТЕЛЕМЕТРИЯ" Юридический адрес организации: Российская Федерация, 664043, Иркутская область, г. Иркутск, ул. Маршала Конева, дом 38 ИНН 7536172565 КПП 381201001 ОГРН 1187536004215 Расчетный счет 40702810010000426573 Банк АО «Тинькофф Банк» БИК банка 044525974 ИНН банка 7710140679 Корреспондентский счет банка 30101810145250000974 Юридический адрес банка 127287, г. Москва, ул. Хуторская 2-я, д. 38А, стр. 26