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Trans RF BJT NPN 15V 0.05A 300mW 3-Pin SOT-23 T/R
Дата загрузки | 20.02.2024 |
Вес и габариты | |
вес, г | 0.02 |
Информация о производителе | |
Производитель | ON Semiconductor*** |
Бренд | ON Semiconductor*** |
Основные | |
automotive | No |
collector- base voltage vcbo: | 30 V |
collector-emitter saturation voltage: | 400 mV |
collector- emitter voltage vceo max: | 15 V |
configuration | Single |
configuration: | Single |
continuous collector current: | 0.05 A |
dc collector/base gain hfe min: | 20 |
eccn (us) | EAR99 |
emitter- base voltage vebo: | 3 V |
eu rohs | Compliant |
factory pack quantity: factory pack quantity: | 3000 |
gain bandwidth product ft: | 600 MHz |
категория | Электронные компоненты/Транзисторы |
lead shape | Gull-wing |
manufacturer: | onsemi |
material | Si |
maximum base emitter saturation voltage (v) | 1@1mA@10mA |
maximum collector base voltage | 30 V dc |
maximum collector base voltage (v) | 30 |
maximum collector cut-off current (na) | 50 |
maximum collector-emitter saturation voltage (v) | 0.4@1mA@10mA |
maximum collector emitter voltage | 15 V |
maximum collector-emitter voltage range (v) | <20 |
maximum collector-emitter voltage (v) | 15 |
maximum dc collector current | 50 mA |
maximum dc collector current: | 50 mA |
maximum dc collector current (a) | 0.05 |
maximum dc collector current range (a) | 0.001 to 0.06 |
maximum emitter base voltage | 3 V |
maximum emitter base voltage (v) | 3 |
maximum junction ambient thermal resistance | 556°C/W |
maximum noise figure (db) | 6 |
maximum operating frequency | 100 MHz |
maximum operating temperature | +150 °C |
maximum operating temperature: | +150 C |
maximum operating temperature (°c) | 150 |
maximum power dissipation | 225 mW |
maximum power dissipation (mw) | 300 |
maximum transition frequency (mhz) | 600(Min) |
minimum dc current gain | 20 |
minimum dc current gain range | 2 to 30 |
minimum operating temperature: | -55 C |
minimum operating temperature (°c) | -55 |
mounting | Surface Mount |
mounting style: | SMD/SMT |
mounting type | Surface Mount |
number of elements per chip | 1 |
operational bias conditions | 6V/8mA |
output power (w) | 0.03(Min) |
package / case: | SOT-23-3 |
package type | SOT-23 |
packaging | Tape and Reel |
партномер | 8017547822 |
part status | Active |
pcb changed | 3 |
pd - power dissipation: | 225 mW |
pin count | 3 |
ppap | No |
product category: | Bipolar Transistors-BJT |
product type: | BJTs-Bipolar Transistors |
series: | MMBT918L |
standard package name | SOT |
subcategory: | Transistors |
supplier package | SOT-23 |
technology: | Si |
transistor configuration | Single |
transistor polarity: | NPN |
transistor type | NPN |
type | NPN |
typical input capacitance (pf) | 2(Max) |
typical output capacitance (pf) | 3(Max) |
typical power gain (db) | 11(Min) |
Время загрузки | 0:18:36 |
Отзывов нет
Компания ООО "Телеметрия"
- Название организации: ООО "ТЕЛЕМЕТРИЯ" Юридический адрес организации: Российская Федерация, 664043, Иркутская область, г. Иркутск, ул. Маршала Конева, дом 38 ИНН 7536172565 КПП 381201001 ОГРН 1187536004215 Расчетный счет 40702810010000426573 Банк АО «Тинькофф Банк» БИК банка 044525974 ИНН банка 7710140679 Корреспондентский счет банка 30101810145250000974 Юридический адрес банка 127287, г. Москва, ул. Хуторская 2-я, д. 38А, стр. 26