MMBT5401-7-F, Bipolar Transistors - BJT SS PNP 300mW

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Артикул: MMBT5401-7-F
Электронные компоненты Транзисторы Биполярные (BJTs) Diodes MMBT5401-7-F, Bipolar Transistors - BJT SS ...
Дата загрузки22.02.2024
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ПроизводительDIODES INC.
БрендDIODES INC.
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Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJTTrans GP BJT PNP 150V 0.6A 350mW 3-Pin SOT-23 T/R
Дата загрузки22.02.2024
Вес и габариты
вес, г0.01
Информация о производителе
ПроизводительDIODES INC.
БрендDIODES INC.
Основные
automotiveNo
collector- base voltage vcbo-160 V
collector- base voltage vcbo:160 V
collector-emitter saturation voltage-0.5 V
collector-emitter saturation voltage:500 mV
collector- emitter voltage vceo max-150 V
collector- emitter voltage vceo max:150 V
configurationSingle
configuration:Single
continuous collector current-0.2 A
continuous collector current:-200 mA
dc collector/base gain hfe min60
dc collector/base gain hfe min:60
dc current gain hfe max240
dc current gain hfe max:240
eccn (us)EAR99
emitter- base voltage vebo-5 V
emitter- base voltage vebo:5 V
eu rohsCompliant
factory pack quantity3000
factory pack quantity: factory pack quantity:3000
gain bandwidth product ft300 MHz
gain bandwidth product ft:300 MHz
категорияЭлектронные компоненты/Транзисторы
lead shapeGull-wing
manufacturerDiodes Incorporated
manufacturer:Diodes Incorporated
maximum base emitter saturation voltage (v)1 1mA 10mA|1 5mA 50mA
maximum collector base voltage-160 V
maximum collector base voltage (v)160
maximum collector cut-off current (na)50
maximum collector-emitter saturation voltage (v)0.2 1mA 10mA|0.5 5mA 50mA
maximum collector emitter voltage150 V
maximum collector-emitter voltage (v)150
maximum dc collector current0.2 A
maximum dc collector current:600 mA
maximum dc collector current (a)0.6
maximum emitter base voltage-5 V
maximum emitter base voltage (v)5
maximum operating frequency300 MHz
maximum operating temperature+150 C
maximum operating temperature:+150 C
maximum operating temperature (°c)150
maximum power dissipation300 mW
maximum power dissipation (mw)350
maximum transition frequency (mhz)300
minimum dc current gain50 1mA 5V|60 10mA 5V|50 50mA 5V
minimum operating temperature-55 C
minimum operating temperature:-55 C
minimum operating temperature (°c)-55
mountingSurface Mount
mounting styleSMD/SMT
mounting style:SMD/SMT
mounting typeSurface Mount
number of elements per chip1
package / caseSOT-23-3
package / case:SOT-23-3
package typeSOT-23
packagingCut Tape or Reel
партномер8004701775
part statusActive
pcb changed3
pd - power dissipation300 mW
pd - power dissipation:310 mW
pin count3
ppapNo
product categoryBipolar Transistors-BJT
product category:Bipolar Transistors-BJT
product typeBJTs-Bipolar Transistors
product type:BJTs-Bipolar Transistors
seriesMMBT5401
series:MMBT5401
standard package nameSOT-23
subcategoryTransistors
subcategory:Transistors
supplier packageSOT-23
technology:Si
transistor configurationSingle
transistor polarityPNP
transistor polarity:PNP
transistor typePNP
typePNP
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