Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

Подробное описание

Вес и габариты
collector- base voltage vcbo	60 V
collector-emitter breakdown voltage	40V
collector-emitter saturation voltage	0.75 V

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Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

Вес и габариты
collector- base voltage vcbo	60 V
collector-emitter breakdown voltage	40V
collector-emitter saturation voltage	0.75 V
collector- emitter voltage vceo max	40 V
configuration	Single
continuous collector current	0.6 A
dc current gain hfe max	300
emitter- base voltage vebo	6 V
factory pack quantity	3000
gain bandwidth product ft	250 MHz
manufacturer	Diodes Incorporated
maximum dc collector current	0.6 A
maximum operating temperature	+150 C
minimum operating temperature	-55 C
mounting style	SMD/SMT
package / case	SOT-23-3
packaging	Cut Tape or Reel
pd - power dissipation	300 mW
product category	Bipolar Transistors-BJT
product type	BJTs-Bipolar Transistors
series	MMBT4401
subcategory	Transistors
transistor polarity	NPN
transistor type	NPN
вес, г	0.01

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Кнопки

MMBT4401-7-F