Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

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Вес и габариты
automotive	No
collector-emitter breakdown voltage	40V
configuration	Single

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Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

Вес и габариты
automotive	No
collector-emitter breakdown voltage	40V
configuration	Single
eccn (us)	EAR99
eu rohs	Compliant
hts	8541.29.00.95
lead shape	Gull-wing
maximum base emitter saturation voltage (v)	0.95@5mA@50mA\|0.85@1mA@10mA
maximum collector base voltage (v)	60
maximum collector cut-off current (na)	50
maximum collector-emitter saturation voltage (v)	0.2@1mA@10mA\|0.3@5mA@50mA
maximum collector-emitter voltage (v)	40
maximum dc collector current	200mA
maximum dc collector current (a)	0.2
maximum emitter base voltage (v)	6
maximum operating temperature (°c)	150
maximum power dissipation (mw)	350
maximum transition frequency (mhz)	300(Min)
military	No
minimum dc current gain	40@0.1mA@1V\|100@10mA@1V\|70@1mA@1V\|60@50mA@1V\|30@100mA@1V
minimum operating temperature (°c)	-55
mounting	Surface Mount
number of elements per chip	1
operating junction temperature (°c)	-55 to 150
package height	1.12(Max)
package length	3.04(Max)
package width	1.4(Max)
packaging	Tape and Reel
part status	Active
pcb changed	3
pd - power dissipation	350mW
pin count	3
product category	Bipolar Small Signal
standard package name	SOT
supplier package	SOT-23
transistor type	NPN
type	NPN

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MMBT3904-TP