MMBT2907ALT3G, Bipolar Transistors - BJT 600mA 60V PNP
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Артикул: MMBT2907ALT3G
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Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJTTrans GP BJT PNP 60V 0.6A 350mW 3-Pin SOT-23 T/R
| Дата загрузки | 20.02.2024 |
| Вес и габариты | |
| вес, г | 0.03 |
| Информация о производителе | |
| Производитель | ON Semiconductor*** |
| Бренд | ON Semiconductor*** |
| Основные | |
| automotive | No |
| collector- base voltage vcbo: | 60 V |
| collector-emitter saturation voltage: | 1.6 V |
| collector- emitter voltage vceo max: | 60 V |
| configuration | Single |
| configuration: | Single |
| continuous collector current: | -600 mA |
| dc collector/base gain hfe min: | 75 |
| eccn (us) | EAR99 |
| emitter- base voltage vebo: | 5 V |
| eu rohs | Compliant |
| factory pack quantity: factory pack quantity: | 10000 |
| gain bandwidth product ft: | 200 MHz |
| категория | Электронные компоненты/Транзисторы |
| lead shape | Gull-wing |
| manufacturer: | onsemi |
| material | Si |
| maximum base emitter saturation voltage (v) | 2.6 50mA 500mA|1.3 15mA 150mA |
| maximum collector base voltage | -60 V |
| maximum collector base voltage (v) | 60 |
| maximum collector cut-off current (na) | 10 |
| maximum collector-emitter saturation voltage (v) | 1.6 50mA 500mA|0.4 15mA 150mA |
| maximum collector emitter voltage | 60 V |
| maximum collector-emitter voltage (v) | 60 |
| maximum dc collector current | 600 mA |
| maximum dc collector current: | 600 mA |
| maximum dc collector current (a) | 0.6 |
| maximum emitter base voltage | -5 V |
| maximum emitter base voltage (v) | 5 |
| maximum operating frequency | 100 MHz |
| maximum operating temperature | +150 °C |
| maximum operating temperature: | +150 C |
| maximum operating temperature (°c) | 150 |
| maximum power dissipation | 350 mW |
| maximum power dissipation (mw) | 350 |
| maximum transition frequency (mhz) | 200(Min) |
| minimum dc current gain | 100 |
| minimum operating temperature: | -55 C |
| minimum operating temperature (°c) | -55 |
| mounting | Surface Mount |
| mounting style: | SMD/SMT |
| mounting type | Surface Mount |
| number of elements per chip | 1 |
| operating junction temperature (°c) | -55 to 150 |
| package / case: | SOT-23-3 |
| package type | SOT-23 |
| packaging | Tape and Reel |
| партномер | 8005526278 |
| part status | Active |
| pcb changed | 3 |
| pd - power dissipation: | 225 mW |
| pin count | 3 |
| ppap | No |
| product category | Bipolar Small Signal |
| product category: | Bipolar Transistors-BJT |
| product type: | BJTs-Bipolar Transistors |
| series: | MMBT2907AL |
| standard package name | SOT |
| subcategory: | Transistors |
| supplier package | SOT-23 |
| technology: | Si |
| transistor configuration | Single |
| transistor polarity: | PNP |
| transistor type | PNP |
| type | PNP |
| Время загрузки | 1:29:36 |
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Компания ООО "Телеметрия"
- Название организации: ООО "ТЕЛЕМЕТРИЯ" Юридический адрес организации: Российская Федерация, 664043, Иркутская область, г. Иркутск, ул. Маршала Конева, дом 38 ИНН 7536172565 КПП 381201001 ОГРН 1187536004215 Расчетный счет 40702810010000426573 Банк АО «Тинькофф Банк» БИК банка 044525974 ИНН банка 7710140679 Корреспондентский счет банка 30101810145250000974 Юридический адрес банка 127287, г. Москва, ул. Хуторская 2-я, д. 38А, стр. 26
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