MMBT2907ALT1HTSA1

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Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJTБиполярный (BJT) транзистор PNP 60V 600mA 200MHz 330mW Surface Mount SOT-23-3
Вес и габариты
base product numberMMBT2907 ->
collector- base voltage vcbo60 V
collector-emitter saturation voltage1.6 V
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Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJTБиполярный (BJT) транзистор PNP 60V 600mA 200MHz 330mW Surface Mount SOT-23-3
Вес и габариты
base product numberMMBT2907 ->
collector- base voltage vcbo60 V
collector-emitter saturation voltage1.6 V
collector- emitter voltage vceo max60 V
configurationSingle
continuous collector current600 mA
current - collector cutoff (max)10nA (ICBO)
current - collector (ic) (max)600mA
dc current gain (hfe) (min) @ ic, vce100 @ 150mA, 10V
eccnEAR99
emitter- base voltage vebo5 V
factory pack quantity3000
frequency - transition200MHz
gain bandwidth product ft200 MHz
htsus8541.21.0075
manufacturerInfineon
maximum operating temperature+150 C
minimum operating temperature-65 C
moisture sensitivity level (msl)1 (Unlimited)
mounting styleSMD/SMT
mounting typeSurface Mount
operating temperature150В°C (TJ)
packageTape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
package / caseSOT-23-3
packagingCut Tape or Reel
part # aliases2907A LT1 MMBT MMBT297ALT1XT SP000011179
pd - power dissipation330 mW
power - max330mW
product categoryBipolar Transistors-BJT
product typeBJTs-Bipolar Transistors
reach statusREACH Unaffected
rohs statusROHS3 Compliant
seriesMMBT2907
subcategoryTransistors
supplier device packageSOT-23-3
transistor polarityPNP
transistor typePNP
vce saturation (max) @ ib, ic1.6V @ 50mA, 500mA
вес, г0.01
voltage - collector emitter breakdown (max)60V
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