| Дата загрузки | 20.02.2024 |
| Вес и габариты | |
| вес, г | 0.7 |
| Информация о производителе | |
| Производитель | ON Semiconductor*** |
| Бренд | ON Semiconductor*** |
| Основные | |
| automotive | No |
| collector- base voltage vcbo | 3 V |
| collector- base voltage vcbo: | 300 V |
| collector- emitter voltage vceo max | 300 V |
| collector- emitter voltage vceo max: | 300 V |
| configuration | Single |
| configuration: | Single |
| continuous collector current | 0.5 A |
| continuous collector current: | 500 mA |
| dc collector/base gain hfe min | 30 |
| dc collector/base gain hfe min: | 30 |
| диапазон рабочих температур, ос | -65…150 |
| eccn (us) | EAR99 |
| emitter- base voltage vebo | 3 V |
| emitter- base voltage vebo: | 5 V |
| eu rohs | Compliant |
| factory pack quantity | 500 |
| factory pack quantity: factory pack quantity: | 500 |
| height | 11.04 mm(Max) |
| hfe при напряжении к-э, в | 10 |
| hfe при токе коллектора, а | 0.05 |
| категория | Электронные компоненты/Транзисторы |
| lead shape | Through Hole |
| length | 7.74 mm(Max) |
| manufacturer | ON Semiconductor |
| manufacturer: | onsemi |
| material | Si |
| maximum collector cut-off current (na) | 100000 |
| maximum collector-emitter voltage (v) | 300 |
| maximum dc collector current | 0.5 A |
| maximum dc collector current: | 500 mA |
| maximum dc collector current (a) | 0.5 |
| maximum emitter base voltage (v) | 3 |
| maximum operating temperature | +150 C |
| maximum operating temperature: | +150 C |
| maximum operating temperature (°c) | 150 |
| maximum power dissipation (mw) | 20000 |
| minimum dc current gain | 30@50mA@10V |
| minimum operating temperature | -65 C |
| minimum operating temperature (°c) | -65 |
| mounting | Through Hole |
| mounting style | SMD/SMT |
| mounting style: | SMD/SMT |
| number of elements per chip | 1 |
| operating junction temperature (°c) | -65 to 150 |
| package / case | TO-225-3 |
| package/case: | TO-225-3 |
| packaging | Bulk |
| packaging: | Bulk |
| партномер | 8004651800 |
| part status | Active |
| pcb changed | 3 |
| pd - power dissipation | 20 W |
| pd - power dissipation: | 20 W |
| pin count | 3 |
| ppap | No |
| product category | Bipolar Transistors-BJT |
| product category: | Bipolar Transistors-BJT |
| product type: | BJTs-Bipolar Transistors |
| rohs | Details |
| series | MJE350 |
| series: | MJE350 |
| standard package name | TO |
| статический коэффициент передачи тока hfe мин | 30 |
| subcategory: | Transistors |
| supplier package | TO-225 |
| tab | Tab |
| technology: | Si |
| transistor polarity | PNP |
| transistor polarity: | PNP |
| type | PNP |
| unit weight | 0.011923 oz |
| Время загрузки | 2:06:03 |
| width | 2.66 mm(Max) |
![2SC3420-GR, Транзистор NPN 20В 5А 1.5Вт [TO-126F]](/wa-data/public/shop/products/04/04/300404/images/351600/351600.300x0.jpg "2SC3420-GR, Транзистор NPN 20В 5А 1.5Вт [TO-126F]")
![2SA1013-Y, Транзистор PNP 160В 1А 0.9Вт [TO-92LM]](/wa-data/public/shop/products/03/04/300403/images/351599/351599.300x0.jpg "2SA1013-Y, Транзистор PNP 160В 1А 0.9Вт [TO-92LM]")
