MJE15030G

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Электронные компоненты Транзисторы Биполярные (BJTs) ON Semiconductor MJE15030G
ON Semiconductor***
Дата загрузки21.02.2024
Вес и габариты
вес, г2.94
Информация о производителе
ПроизводительON Semiconductor***
БрендON Semiconductor***
490
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Итого: 490
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ЭлектроэлементTRANSISTOR, NPN, 150V, 8A, TO-220; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:150V; Transition Frequency ft:30MHz; Power Dissipation Pd:50W; DC Collector Current:8A; DC Current Gain hFE:40hFE; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:Lead (27-Jun-2018); Application Code:PGP; Collector Emitter Saturation Voltage Vce(on):500mV; Continuous Collector Current Ic Max:8A; Current Ic Continuous a Max:1A; Current Ic hFE:3A; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:30MHz; Gain Bandwidth ft Typ:30MHz; Hfe Min:40; No. of Transistors:1; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:50W; Pulsed Current Icm:16A; Voltage Vcbo:150V
Дата загрузки21.02.2024
Вес и габариты
вес, г2.94
Информация о производителе
ПроизводительON Semiconductor***
БрендON Semiconductor***
Основные
automotiveNo
collector- base voltage vcbo150 V
collector-emitter saturation voltage0.5 V
collector- emitter voltage vceo max150 V
configurationSingle
continuous collector current8 A
dc collector/base gain hfe min40
eccn (us)EAR99
emitter- base voltage vebo5 V
eu rohsCompliant with Exemption
factory pack quantity50
gain bandwidth product ft30 MHz
height15.75 mm
hts8541.29.00.95
категорияЭлектронные компоненты/Транзисторы
lead shapeThrough Hole
length10.53 mm
manufacturerON Semiconductor
materialSi
maximum collector base voltage150 V
maximum collector base voltage (v)150
maximum collector cut-off current (na)10000
maximum collector-emitter saturation voltage (v)0.5@0.1A@1A
maximum collector emitter voltage150 V
maximum collector-emitter voltage (v)150
maximum dc collector current8 A
maximum dc collector current (a)8
maximum emitter base voltage5 V
maximum emitter base voltage (v)5
maximum operating frequency30 MHz
maximum operating temperature+150 C
maximum operating temperature (°c)150
maximum power dissipation50 W
maximum power dissipation (mw)50000
maximum transition frequency (mhz)30(Min)
militaryNo
minimum dc current gain40@100mA@2V|20@4A@2V|40@3A@2V|40@2A@2V
minimum operating temperature-65 C
minimum operating temperature (°c)-65
mountingThrough Hole
mounting styleThrough Hole
mounting typeThrough Hole
number of elements per chip1
package / caseTO-220-3
package height9.28(Max)
package length10.53(Max)
package typeTO-220AB
package width4.83(Max)
packagingTube
партномер8002973334
part statusActive
pcb changed3
pd - power dissipation50 W
pin count3
product categoryBipolar Transistors-BJT
rohsDetails
seriesMJE15030
standard package nameTO-220
supplier packageTO-220AB
tabTab
transistor configurationSingle
transistor polarityNPN
transistor typeNPN
typeNPN
unit weight0.211644 oz
Время загрузки0:45:43
width4.83 mm
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