MJD50G, Биполярный транзистор, универсальный, NPN, 400 В, 10 МГц, 1.56 Вт, 1 А, 30 hFE

TRANSISTOR, NPN, D-PAK; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Transition Frequency ft:10MHz; Power Dissipation Pd:1.56W; DC Collector Current:1A; DC Current Gain hFE:30hFE; Transistor Case Style:TO-252; No. of Pins:4Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018); Application Code:PGP; Collector Emitter Saturation Voltage Vce(on):1V; Continuous Collector Current Ic Max:1A; Current Ic Continuous a Max:1A; Current Ic hFE:200mA; External Depth:10.28mm; External Length / Height:2.38mm; External Width:6.73mm; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:10MHz; Gain Bandwidth ft Typ:10MHz; Hfe Min:25; No. of Transistors:1; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:15W; SMD Marking:MJD50; Voltage Vcbo:500V