MJD45H11G, Bipolar Transistors - BJT 8A 80V 20W PNP

TRANSISTOR, PNP, D-PAK; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:90MHz; Power Dissipation Pd:20W; DC Collector Current:8A; DC Current Gain hFE:60hFE; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):-1V; Continuous Collector Current Ic Max:8A; Current Ic Continuous a Max:8A; Current Ic hFE:4A; External Depth:10.28mm; External Length / Height:2.38mm; External Width:6.73mm; Full Power Rating Temperature:25°C; Gain Bandwidth ft Typ:40MHz; Hfe Min:40; No. of Transistors:1; Operating Temperature Min:-55°C; Power Dissipation Ptot Max:20W; SMD Marking:MJD45H11; Voltage Vcbo:10VDC