| Дата загрузки | 20.02.2024 |
| Вес и габариты | |
| вес, г | 0.66 |
| Информация о производителе | |
| Производитель | ON Semiconductor*** |
| Бренд | ON Semiconductor*** |
| Основные | |
| automotive | No |
| частота перехода ft | 40МГц |
| collector- base voltage vcbo | 100 V |
| collector-emitter saturation voltage | 0.6 V |
| collector emitter voltage max | 100В |
| collector- emitter voltage vceo max | 100 V |
| configuration | Single |
| continuous collector current | 4 A |
| dc collector/base gain hfe min | 40 |
| dc current gain hfe min | 15hFE |
| dc усиление тока hfe | 15hFE |
| eccn (us) | EAR99 |
| emitter- base voltage vebo | 7 V |
| eu rohs | Compliant with Exemption |
| factory pack quantity | 2500 |
| gain bandwidth product ft | 40 MHz |
| height | 2.38 mm |
| hts | 8541.29.00.95 |
| категория | Электронные компоненты/Транзисторы |
| количество выводов | 3вывод(-ов) |
| lead shape | Gull-wing |
| length | 6.73 mm |
| максимальная рабочая температура | 150°C |
| manufacturer | ON Semiconductor |
| material | Si |
| maximum base current (a) | 1 |
| maximum base emitter saturation voltage (v) | 1.8@200mA@2A |
| maximum collector base voltage | 100 V dc |
| maximum collector base voltage (v) | 100 |
| maximum collector cut-off current (na) | 100 |
| maximum collector-emitter saturation voltage (v) | 0.3@50mA@500mA|0.6@100mA@1A |
| maximum collector emitter voltage | -100 V |
| maximum collector-emitter voltage (v) | 100 |
| maximum dc collector current | 4 A |
| maximum dc collector current (a) | 4 |
| maximum emitter base voltage | 7 V |
| maximum emitter base voltage (v) | 7 |
| maximum operating frequency | 10 MHz |
| maximum operating temperature | +150 C |
| maximum operating temperature (°c) | 150 |
| maximum power dissipation | 12.5 W |
| maximum power dissipation (mw) | 1400 |
| military | No |
| minimum dc current gain | 15@1A@1V|40@200mA@1V |
| minimum operating temperature | -65 C |
| minimum operating temperature (°c) | -65 |
| монтаж транзистора | Surface Mount |
| mounting | Surface Mount |
| mounting style | SMD/SMT |
| mounting type | Surface Mount |
| number of elements per chip | 1 |
| operating junction temperature (°c) | -65 to 150 |
| package / case | TO-252-3(DPAK) |
| package height | 2.38(Max) |
| package length | 6.73(Max) |
| package type | DPAK(TO-252) |
| package width | 6.22(Max) |
| packaging | Reel |
| партномер | 8002981907 |
| part status | Active |
| pcb changed | 2 |
| pd - power dissipation | 12.5 W |
| pin count | 3 |
| полярность транзистора | PNP |
| power dissipation | 12.5Вт |
| product category | Bipolar Transistors-BJT |
| rohs | Details |
| series | MJD253 |
| standard package name | TO-252 |
| стиль корпуса транзистора | TO-252(DPAK) |
| supplier package | DPAK |
| tab | Tab |
| transistor configuration | Single |
| transistor polarity | PNP |
| transistor type | PNP |
| type | PNP |
| уровень чувствительности к влажности (msl) | MSL 1-Безлимитный |
| Время загрузки | 2:02:03 |
| width | 6.22 mm |
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