MJD243T4G, 100nA 100V 1.4W 40@200mA,1V 4A 40MHz 600mV@1A,100mA NPN -65°C~+150°C@(Tj) DPAK-3 BIpolar TransIstors - BJT ROHS
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Артикул: MJD243T4G
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Trans GP BJT NPN 100V 4A 1400mW 3-Pin(2+Tab) DPAK T/R
| Дата загрузки | 21.02.2024 |
| Вес и габариты | |
| вес, г | 0.47 |
| Информация о производителе | |
| Производитель | ON Semiconductor*** |
| Бренд | ON Semiconductor*** |
| Основные | |
| automotive | No |
| collector- base voltage vcbo: | 100 V |
| collector-emitter saturation voltage: | 600 mV |
| collector- emitter voltage vceo max: | 100 V |
| configuration | Single |
| configuration: | Single |
| continuous collector current: | 4 A |
| dc collector/base gain hfe min: | 40 |
| eccn (us) | EAR99 |
| emitter- base voltage vebo: | 7 V |
| eu rohs | Compliant with Exemption |
| factory pack quantity: factory pack quantity: | 2500 |
| gain bandwidth product ft: | 40 MHz |
| категория | Электронные компоненты/Транзисторы |
| lead shape | Gull-wing |
| manufacturer: | onsemi |
| material | Si |
| maximum base current (a) | 1 |
| maximum base emitter saturation voltage (v) | 1.8 200mA 2A |
| maximum collector base voltage | 100 V dc |
| maximum collector base voltage (v) | 100 |
| maximum collector cut-off current (na) | 100 |
| maximum collector-emitter saturation voltage (v) | 0.3 50mA 500mA|0.6 100mA 1A |
| maximum collector emitter voltage | 100 V |
| maximum collector-emitter voltage (v) | 100 |
| maximum dc collector current | 4 A |
| maximum dc collector current: | 4 A |
| maximum dc collector current (a) | 4 |
| maximum emitter base voltage | 7 V |
| maximum emitter base voltage (v) | 7 |
| maximum operating frequency | 10 MHz |
| maximum operating temperature | +150 °C |
| maximum operating temperature: | +150 C |
| maximum operating temperature (°c) | 150 |
| maximum power dissipation | 12.5 W |
| maximum power dissipation (mw) | 1400 |
| minimum dc current gain | 15 1A 1V|40 200mA 1V |
| minimum operating temperature: | -65 C |
| minimum operating temperature (°c) | -65 |
| mounting | Surface Mount |
| mounting style: | SMD/SMT |
| mounting type | Surface Mount |
| number of elements per chip | 1 |
| operating junction temperature (°c) | -65 to 150 |
| package/case: | TO-252-3 |
| package type | DPAK(TO-252) |
| packaging | Tape and Reel |
| партномер | 8017611573 |
| part status | Active |
| pcb changed | 2 |
| pd - power dissipation: | 12.5 W |
| pin count | 3 |
| ppap | No |
| product category | Bipolar Power |
| product category: | Bipolar Transistors-BJT |
| product type: | BJTs-Bipolar Transistors |
| series: | MJD243 |
| standard package name | TO-252 |
| subcategory: | Transistors |
| supplier package | DPAK |
| tab | Tab |
| technology: | Si |
| transistor configuration | Single |
| transistor polarity: | NPN |
| transistor type | NPN |
| type | NPN |
| Время загрузки | 0:53:16 |
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Компания ООО "Телеметрия"
- Название организации: ООО "ТЕЛЕМЕТРИЯ" Юридический адрес организации: Российская Федерация, 664043, Иркутская область, г. Иркутск, ул. Маршала Конева, дом 38 ИНН 7536172565 КПП 381201001 ОГРН 1187536004215 Расчетный счет 40702810010000426573 Банк АО «Тинькофф Банк» БИК банка 044525974 ИНН банка 7710140679 Корреспондентский счет банка 30101810145250000974 Юридический адрес банка 127287, г. Москва, ул. Хуторская 2-я, д. 38А, стр. 26
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