MJD210G, MJD210G PNP Transistor, -5 A, -25 V, 3 + Tab-Pin DPAK

Semiconductors\Discrete Semiconductors\Bipolar TransistorsTRANSISTOR, PNP, D-PAK; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:25V; Transition Frequency ft:65MHz; Power Dissipation Pd:1.4W; DC Collector Current:5A; DC Current Gain hFE:3hFE; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):300mV; Complementary Device:MJD200G; Continuous Collector Current Ic Max:5A; Current Ic Continuous a Max:5A; Current Ic hFE:5A; Gain Bandwidth ft Typ:65MHz; Hfe Min:10; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Peak Current Icm:10A; Power Dissipation Ptot Max:12.5W; Termination Type:Surface Mount Device; Voltage Vcbo:40V