MJD122G, Darlington Transistors 8A 100V Bipolar Power NPN

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Артикул: MJD122G
Электронные компоненты Транзисторы Биполярные (BJTs) ON Semiconductor MJD122G, Darlington Transistors 8A 100V ...
ON Semiconductor***
Дата загрузки21.02.2024
Вес и габариты
вес, г0.5
Информация о производителе
ПроизводительON Semiconductor***
БрендON Semiconductor***
260
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Бонус: 5.2 !
Бонусная программа
Итого: 260
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TRANSISTOR, DARLINGTON, 100V, 8A, D-PAK; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency ft:-; Power Dissipation Pd:1.75W; DC Collector Current:8A; DC Current Gain hFE:2500hFE; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018); Av Current Ic:8A; Collector Emitter Saturation Voltage Vce(on):2V; Continuous Collector Current Ic Max:8A; Current Ic Continuous a Max:8A; Current Ic hFE:4A; Device Marking:MJD122; External Depth:10.5mm; External Length / Height:2.55mm; External Width:6.8mm; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:4MHz; Hfe Min:1000; No. of Transistors:1; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:20W; SMD Marking:MJD122; Transistor Type:Darlington; Voltage Vcbo:100V
Дата загрузки21.02.2024
Вес и габариты
вес, г0.5
Информация о производителе
ПроизводительON Semiconductor***
БрендON Semiconductor***
Основные
automotiveNo
collector- base voltage vcbo100 V
collector- emitter voltage vceo max100 V
configurationSingle
continuous collector current8 A
dc collector/base gain hfe min1000
dc current gain hfe max12000
eccn (us)EAR99
emitter- base voltage vebo5 V
eu rohsCompliant with Exemption
factory pack quantity75
height2.38 mm
hts8541.29.00.95
категорияЭлектронные компоненты/Транзисторы
lead shapeGull-wing
length6.73 mm
manufacturerON Semiconductor
maximum base emitter saturation voltage4.5 V
maximum base emitter saturation voltage (v)4.5@80mA@8A
maximum collector base voltage100 V
maximum collector base voltage (v)100
maximum collector cut-off current10 uA
maximum collector cut-off current (ua)10
maximum collector emitter saturation voltage4 V
maximum collector-emitter saturation voltage (v)4@80mA@8A|2@16mA@4A
maximum collector emitter voltage100 V
maximum collector-emitter voltage (v)100
maximum continuous collector current8 A
maximum continuous dc collector current (a)8
maximum dc collector current8 A
maximum emitter base voltage5 V
maximum emitter base voltage (v)5
maximum operating temperature+150 C
maximum operating temperature (°c)150
maximum power dissipation (mw)1750
militaryNo
minimum dc current gain1000@4A@4V|100@8A@4V
minimum operating temperature-65 C
minimum operating temperature (°c)-65
mountingSurface Mount
mounting styleSMD/SMT
mounting typeSurface Mount
number of elements per chip1
package / caseTO-252-3(DPAK)
package height2.38(Max)
package length6.73(Max)
package typeDPAK(TO-252)
package width6.22(Max)
packagingTube
партномер8005371429
part statusActive
pcb changed2
pd - power dissipation20 W
pin count3
product categoryDarlington Transistors
rohsDetails
seriesMJD122
standard package nameTO-252
supplier packageDPAK
supplier temperature gradeAutomotive
tabTab
transistor configurationSingle
transistor polarityNPN
transistor typeNPN
typeNPN
typical current gain bandwidth (mhz)4(Min)
Время загрузки0:53:24
width6.22 mm
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