Diodes, Transistors and Thyristors\Bipolar Transistors\Darlington BJTTrans Darlington NPN 100V 8A 20000mW 3-контактная (3 Tab) трубка IPAK

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Diodes, Transistors and Thyristors\Bipolar Transistors\Darlington BJTTrans Darlington NPN 100V 8A 20000mW 3-контактная (3 Tab) трубка IPAK

Вес и габариты
automotive	No
base product number	MJD122 ->
configuration	Single
current - collector cutoff (max)	10ВµA
current - collector (ic) (max)	8A
dc current gain (hfe) (min) @ ic, vce	1000 @ 4A, 4V
eccn	EAR99
eccn (us)	ear99
eu rohs	Compliant with Exemption
htsus	8541.29.0095
maximum base emitter saturation voltage (v)	4.5 80mA 8A
maximum collector base voltage (v)	100
maximum collector cut-off current (ua)	10
maximum collector-emitter voltage (v)	100
maximum continuous dc collector current (a)	8
maximum emitter base voltage (v)	5
maximum operating temperature (°c)	150
maximum power dissipation (mw)	20000
minimum dc current gain	1000 4A 4V\|100 8A 4V
minimum operating temperature (°c)	-65
moisture sensitivity level (msl)	1 (Unlimited)
mounting	Through Hole
mounting type	Through Hole
number of elements per chip	1
operating temperature	150В°C (TJ)
package	Bulk
package / case	TO-251-3 Short Leads, IPak, TO-251AA
packaging	Tube
part status	Unconfirmed
pcb changed	3
pin count	3
power - max	20W
ppap	No
reach status	REACH Unaffected
rohs status	ROHS3 Compliant
standard package name	TO-251
supplier device package	TO-251-3
supplier package	IPAK
tab	Tab
transistor type	NPN - Darlington
vce saturation (max) @ ib, ic	4V @ 80mA, 8A
voltage - collector emitter breakdown (max)	100V

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MJD122-1, Trans Darlington NPN 100V 8A 20000mW 3-Pin(3+Tab) IPAK Tube