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Полупроводники - Дискретные\Транзисторы\Биполярные Транзисторы\Биполярные Одиночные Массивы Транзисторов - BJTThis high-performance Bipolar (BJT) Single Transistor, engineered to elevate the electronic circuits to new heights. This NPN transistor is a powerful component capable of handling voltages up to 250 V, currents of up to 16 A, and power dissipation of 250 W, making it ideal for a wide range of applications where robust performance is essential. Crafted with precision and reliability in mind, this transistor is housed in a TO-3 package, ensuring efficient heat dissipation and enhanced thermal management, even under high-power operating conditions. The TO-3 package also facilitates easy and secure mounting through a reliable through-hole connection, simplifying the integration process into your circuit designs.
• High Safe Operating Area (100% Tested) 2 A@ 80 V• High DC Current Gain hFE = 15 (Min) @ lc= 8 Adc
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