Дата загрузки | 22.02.2024 |
Вес и габариты | |
вес, г | 0.12 |
Информация о производителе | |
Производитель | Microchip Technology |
Бренд | Microchip Technology |
Основные | |
automotive | No |
channel mode | Depletion |
channel type | N |
configuration | Single Dual Drain |
eccn (us) | EAR99 |
категория | Электронные компоненты/Транзисторы |
lead shape | Flat |
maximum continuous drain current | 30 mA |
maximum continuous drain current (a) | 0.03 |
maximum diode forward voltage (v) | 0.9 |
maximum drain source resistance | 1 kΩ |
maximum drain source resistance (mohm) | 1000000@0V |
maximum drain source voltage | 500 V |
maximum drain source voltage (v) | 500 |
maximum gate source leakage current (na) | 100 |
maximum gate source voltage | -20 V, +20 V |
maximum gate source voltage (v) | ±20 |
maximum gate threshold voltage | 3V |
maximum idss (ua) | 3 |
maximum operating temperature | +150 °C |
maximum operating temperature (°c) | 150 |
maximum positive gate source voltage (v) | 20 |
maximum power dissipation | 1.6 W |
maximum power dissipation (mw) | 1600 |
maximum power dissipation on pcb @ tc=25°c (w) | 01.06.2024 |
maximum pulsed drain current @ tc=25°c (a) | 0.03 |
minimum operating temperature | -55 °C |
minimum operating temperature (°c) | -55 |
mounting | Surface Mount |
mounting type | Surface Mount |
number of elements | 1 |
number of elements per chip | 1 |
operating temperature classification | Military |
operating temp range | -55C to 150C |
package type | SOT-89 |
packaging | Tape and Reel |
партномер | 8002679430 |
part status | Active |
pcb changed | 3 |
pin count | 3+Tab |
polarity | N |
power dissipation | 1.6(W) |
ppap | No |
process technology | DMOS |
product category | Power MOSFET |
rad hardened | No |
standard package name | SOT |
supplier package | SOT-89 |
tab | Tab |
transistor configuration | Single |
transistor material | Si |
type | Power MOSFET |
typical fall time (ns) | 1300 |
typical gate plateau voltage (v) | 0.5 |
typical input capacitance @ vds (pf) | 7.5@25V |
typical output capacitance (pf) | 2 |
typical reverse recovery time (ns) | 200 |
typical reverse transfer capacitance @ vds (pf) | 0.5@25V |
typical rise time (ns) | 450 |
typical turn-off delay time (ns) | 100 |
typical turn-on delay time (ns) | 90 |
Время загрузки | 2:18:29 |
width | 2.6mm |