Semiconductors\Discrete Semiconductors\Transistors\MOSFET

Подробное описание

Вес и габариты
continuous drain current (id) @ 25в°c	130mA
power dissipation-max (ta=25в°c)	225mW
rds on - drain-source resistance	10О© @ 100mA,5V

4 ₽

– +

Бонус: 0.08 !

Бонусная программа

Итого: 4 ₽

Купить

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

Вес и габариты
continuous drain current (id) @ 25в°c	130mA
power dissipation-max (ta=25в°c)	225mW
rds on - drain-source resistance	10О© @ 100mA,5V
transistor polarity	P Channel
vds - drain-source breakdown voltage	50V
vgs - gate-source voltage	2V @ 250uA

Отзывов нет

Кнопки

LBSS84LT1G