Name: KSD2012GTU, 60V 25W 3A NPN TO-220F-3 Bipolar Transistors - BJT ROHS
Brand: ON Semiconductor***
SKU: KSD2012GTU

Электронные компоненты Транзисторы Биполярные (BJTs) ON Semiconductor KSD2012GTU, 60V 25W 3A NPN TO-220F-3 Bipolar ...

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480 ₽

– +

Бонус: 9.6 !

Бонусная программа

Итого: 480 ₽

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Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs.

Дата загрузки	21.02.2024
Вес и габариты
вес, г	2.96
Информация о производителе
Производитель	ON Semiconductor***
Бренд	ON Semiconductor***
Основные
collector- base voltage vcbo:	60 V
collector-emitter saturation voltage:	400 mV
collector- emitter voltage vceo max:	60 V
configuration:	Single
continuous collector current:	3 A
dc current gain hfe max:	320
emitter- base voltage vebo:	7 V
factory pack quantity: factory pack quantity:	50
gain bandwidth product ft:	3 MHz
категория	Электронные компоненты/Транзисторы
manufacturer:	onsemi
maximum collector base voltage	60 V
maximum collector emitter voltage	60 V
maximum dc collector current	3 A
maximum dc collector current:	3 A
maximum emitter base voltage	7 V
maximum operating temperature	+150 °C
maximum operating temperature:	+150 C
maximum power dissipation	25 W
minimum dc current gain	150
mounting style:	Through Hole
mounting type	Through Hole
number of elements per chip	1
package / case:	TO-220F-3
package type	TO-220F
packaging:	Tube
партномер	8017626270
pd - power dissipation:	25 W
pin count	3
product category:	Bipolar Transistors-BJT
product type:	BJTs-Bipolar Transistors
series:	KSD2012
subcategory:	Transistors
technology:	Si
transistor configuration	Single
transistor polarity:	NPN
transistor type	NPN
Время загрузки	0:56:35

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