Discrete Semiconductor Products\Transistors - Bipolar (BJT) - SingleБиполярный (BJT) транзистор NPN 150V 300mA 1W Through Hole TO-39

Подробное описание

Вес и габариты
base product number	2N3501 ->
current - collector cutoff (max)	10ВµA (ICBO)
current - collector (ic) (max)	300mA

1 810 ₽

– +

Бонус: 36.2 !

Бонусная программа

Итого: 1 810 ₽

Купить

Discrete Semiconductor Products\Transistors - Bipolar (BJT) - SingleБиполярный (BJT) транзистор NPN 150V 300mA 1W Through Hole TO-39

Вес и габариты
base product number	2N3501 ->
current - collector cutoff (max)	10ВµA (ICBO)
current - collector (ic) (max)	300mA
dc current gain (hfe) (min) @ ic, vce	100 @ 150mA, 10V
eccn	EAR99
htsus	8541.29.0095
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Through Hole
notification	QPL or Military Specs are for reference only. Part
operating temperature	-65В°C ~ 200В°C (TJ)
package	Bulk
package / case	TO-205AD, TO-39-3 Metal Can
power - max	1W
reach status	REACH Unaffected
rohs status	RoHS non-compliant
series	Military, MIL-PRF-19500/366 ->
supplier device package	TO-39
transistor type	NPN
vce saturation (max) @ ib, ic	400mV @ 15mA, 150mA
voltage - collector emitter breakdown (max)	150V

Отзывов нет

Кнопки

JANTX2N3501