Discrete Semiconductor Products\Transistors - Bipolar (BJT) - SingleБиполярный (BJT) транзистор PNP 40V 1A 1W Through Hole TO-39

Подробное описание

Вес и габариты
current - collector cutoff (max)	100nA (ICBO)
current - collector (ic) (max)	1A
dc current gain (hfe) (min) @ ic, vce	40 @ 500mA, 1V

71 210 ₽

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Discrete Semiconductor Products\Transistors - Bipolar (BJT) - SingleБиполярный (BJT) транзистор PNP 40V 1A 1W Through Hole TO-39

Вес и габариты
current - collector cutoff (max)	100nA (ICBO)
current - collector (ic) (max)	1A
dc current gain (hfe) (min) @ ic, vce	40 @ 500mA, 1V
eccn	EAR99
htsus	8541.29.0095
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Through Hole
notification	QPL or Military Specs are for reference only. Part
operating temperature	-55В°C ~ 175В°C (TJ)
package	Bulk
package / case	TO-205AD, TO-39-3 Metal Can
power - max	1W
reach status	REACH Unaffected
rohs status	RoHS non-compliant
series	Military, MIL-PRF-19500/348 ->
supplier device package	TO-39
transistor type	PNP
vce saturation (max) @ ib, ic	1.2V @ 100mA, 1A
voltage - collector emitter breakdown (max)	40V

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JANTX2N3467