Discrete Semiconductor Products\Transistors - Bipolar (BJT) - SingleБиполярный (BJT) транзистор PNP 175V 1A 1W Through Hole TO-39

Подробное описание

Вес и габариты
base product number	2N3637 ->
current - collector cutoff (max)	10ВµA
current - collector (ic) (max)	1A

17 310 ₽

– +

Бонус: 346.2 !

Бонусная программа

Итого: 17 310 ₽

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Discrete Semiconductor Products\Transistors - Bipolar (BJT) - SingleБиполярный (BJT) транзистор PNP 175V 1A 1W Through Hole TO-39

Вес и габариты
base product number	2N3637 ->
current - collector cutoff (max)	10ВµA
current - collector (ic) (max)	1A
dc current gain (hfe) (min) @ ic, vce	100 @ 50mA, 10V
eccn	EAR99
htsus	8541.29.0095
категория продукта	Биполярные транзисторы - BJT
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Through Hole
notification	QPL or Military Specs are for reference only. Part
operating temperature	-65В°C ~ 200В°C (TJ)
package	Bulk
package / case	TO-205AD, TO-39-3 Metal Can
подкатегория	Transistors
power - max	1W
размер фабричной упаковки	50
reach status	REACH Unaffected
rohs	N
rohs status	RoHS non-compliant
series	Military, MIL-PRF-19500/357 ->
supplier device package	TO-39
технология	Si
тип продукта	BJTs - Bipolar Transistors
торговая марка	Microchip / Microsemi
transistor type	PNP
упаковка	Tray
vce saturation (max) @ ib, ic	600mV @ 5mA, 50mA
voltage - collector emitter breakdown (max)	175V

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JANS2N3637