Discrete Semiconductor Products\Transistors - Bipolar (BJT) - SingleБиполярный (BJT) транзистор NPN 80V 1A 800mW Through Hole TO-5

Подробное описание

Вес и габариты
base product number	2N3019 ->
current - collector cutoff (max)	10ВµA (ICBO)
current - collector (ic) (max)	1A

20 960 ₽

– +

Бонус: 419.2 !

Бонусная программа

Итого: 20 960 ₽

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Discrete Semiconductor Products\Transistors - Bipolar (BJT) - SingleБиполярный (BJT) транзистор NPN 80V 1A 800mW Through Hole TO-5

Вес и габариты
base product number	2N3019 ->
current - collector cutoff (max)	10ВµA (ICBO)
current - collector (ic) (max)	1A
dc current gain (hfe) (min) @ ic, vce	50 @ 500mA, 10V
eccn	EAR99
htsus	8541.21.0095
категория продукта	Биполярные транзисторы - BJT
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Through Hole
notification	QPL or Military Specs are for reference only. Part
operating temperature	-65В°C ~ 200В°C (TJ)
package	Bulk
package / case	TO-205AA, TO-5-3 Metal Can
подкатегория	Transistors
power - max	800mW
размер фабричной упаковки	1
reach status	REACH Unaffected
rohs	N
rohs status	RoHS non-compliant
series	Military, MIL-PRF-19500/391 ->
supplier device package	TO-5
тип продукта	BJTs - Bipolar Transistors
торговая марка	Microsemi
transistor type	NPN
упаковка	Tray
vce saturation (max) @ ib, ic	500mV @ 50mA, 500mA
voltage - collector emitter breakdown (max)	80V

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JANS2N3019