Вес и габариты
collector- base voltage vcbo	-300 V
collector-emitter saturation voltage	-170 mV
collector- emitter voltage vceo max	-300 V

250 ₽

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Вес и габариты
collector- base voltage vcbo	-300 V
collector-emitter saturation voltage	-170 mV
collector- emitter voltage vceo max	-300 V
configuration	Single
continuous collector current	-1 A
dc collector/base gain hfe min	90 at-1 A, -10 V
dc current gain hfe max	300 at-500 mA, -10 V
emitter- base voltage vebo	-6 V
factory pack quantity	1000
gain bandwidth product ft	85 MHz
manufacturer	Diodes Incorporated
maximum dc collector current	-1 A
maximum operating temperature	+150 C
minimum operating temperature	-55 C
mounting style	SMD/SMT
package / case	SOT-223-4
packaging	Cut Tape or Reel
pd - power dissipation	3 W
product category	Bipolar Transistors-BJT
product type	BJTs-Bipolar Transistors
series	FZT957
subcategory	Transistors
transistor polarity	PNP
вес, г	0.112

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FZT957TA