| Вес и габариты | |
| collector- base voltage vcbo | -300 V |
| collector-emitter saturation voltage | -170 mV |
| collector- emitter voltage vceo max | -300 V |
| configuration | Single |
| continuous collector current | -1 A |
| dc collector/base gain hfe min | 90 at-1 A, -10 V |
| dc current gain hfe max | 300 at-500 mA, -10 V |
| emitter- base voltage vebo | -6 V |
| factory pack quantity | 1000 |
| gain bandwidth product ft | 85 MHz |
| manufacturer | DIODES INCORPORATED |
| maximum dc collector current | -1 A |
| maximum operating temperature | +150 C |
| minimum operating temperature | -55 C |
| mounting style | SMD/SMT |
| package / case | SOT-223-4 |
| packaging | Cut Tape or Reel |
| pd - power dissipation | 3 W |
| product category | Bipolar Transistors-BJT |
| product type | BJTs-Bipolar Transistors |
| series | FZT957 |
| subcategory | Transistors |
| transistor polarity | PNP |