Вес и габариты
collector- base voltage vcbo	80 V
collector-emitter saturation voltage	350 mV
collector- emitter voltage vceo max	30 V

230 ₽

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Вес и габариты
collector- base voltage vcbo	80 V
collector-emitter saturation voltage	350 mV
collector- emitter voltage vceo max	30 V
configuration	Single
continuous collector current	7 A
dc collector/base gain hfe min	30 at 20 A, 2 V
dc current gain hfe max	100
emitter- base voltage vebo	6 V
factory pack quantity	1000
gain bandwidth product ft	100 MHz
manufacturer	DIODES INCORPORATED
maximum dc collector current	20 A
maximum operating temperature	+150 C
minimum operating temperature	-55 C
mounting style	SMD/SMT
package / case	SOT-223-4
packaging	Cut Tape or Reel
pd - power dissipation	3 W
product category	Bipolar Transistors-BJT
product type	BJTs-Bipolar Transistors
series	FZT849
subcategory	Transistors
transistor polarity	NPN
вес, г	0.11

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FZT849TA