Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

Подробное описание

Вес и габариты
collector- base voltage vcbo	-40 V
collector-emitter breakdown voltage	40V
collector-emitter saturation voltage	-245 mV

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Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

Вес и габариты
collector- base voltage vcbo	-40 V
collector-emitter breakdown voltage	40V
collector-emitter saturation voltage	-245 mV
collector- emitter voltage vceo max	-40 V
configuration	Single
continuous collector current	-1.5 A
dc current gain hfe max	300 at 10 mA, 2 V
emitter- base voltage vebo	5 V
factory pack quantity	3000
gain bandwidth product ft	190 MHz
manufacturer	DIODES INCORPORATED
maximum dc collector current	1.5A
maximum operating temperature	+150 C
minimum operating temperature	-55 C
mounting style	SMD/SMT
package / case	SOT-23-3
packaging	Cut Tape or Reel
pd - power dissipation	625mW
product category	Bipolar Transistors-BJT
product type	BJTs-Bipolar Transistors
series	FMMT720
subcategory	Transistors
transistor polarity	PNP
transistor type	PNP

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FMMT720TA