FMMT718TA, Bipolar Transistors - BJT PNP SuperSOT

Оставить отзыв
В избранноеВ сравнение
Артикул: FMMT718TA
Электронные компоненты Транзисторы Биполярные (BJTs) Diodes FMMT718TA, Bipolar Transistors - BJT PNP SuperSOT
Дата загрузки22.02.2024
Вес и габариты
вес, г0.01
Информация о производителе
ПроизводительDIODES INC.
БрендDIODES INC.
130
+
Бонус: 2.6 !
Бонусная программа
Итого: 130
Купить
  • Обзор
  • Характеристики
  • Отзывы (0)
  • Реквизиты
Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJTTRANSISTOR, PNP, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:20V; Transition Frequency ft:180MHz; Power Dissipation Pd:625mW; DC Collector Current:-1.5A; DC Current Gain hFE:475hFE; Transistor Case Style:SOT-23; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on):220mV; Continuous Collector Current Ic Max:1.5A; Current Ic Continuous a Max:1.5A; Current Ic hFE:100mA; Device Marking:MT718; Gain Bandwidth ft Min:150MHz; Gain Bandwidth ft Typ:180MHz; Hfe Min:300; No. of Transistors:1; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Power Dissipation Ptot Max:625mW; SMD Marking:718; Tape Width:8mm; Turn Off Time:670ns; Turn On Time:40ns; Voltage Vcbo:20V
Дата загрузки22.02.2024
Вес и габариты
вес, г0.01
Информация о производителе
ПроизводительDIODES INC.
БрендDIODES INC.
Основные
collector- base voltage vcbo-20 V
collector- base voltage vcbo:20 V
collector-emitter saturation voltage-145 mV
collector-emitter saturation voltage:145 mV
collector- emitter voltage vceo max-20 V
collector- emitter voltage vceo max:20 V
configurationSingle
configuration:Single
continuous collector current:-1.5 A
dc collector/base gain hfe min300 at 10 mA at 2 V, 300 at 100 mA at 2 V, 150 at 2 A at 2 V, 35 at 4 A at 2 V, 15 at 6 A at 2 V
dc current gain hfe max300 at 10 mA at 2 V
dc current gain hfe max:300 at 10 mA, 2 V
emitter- base voltage vebo5 V
emitter- base voltage vebo:7 V
factory pack quantity3000
factory pack quantity: factory pack quantity:3000
gain bandwidth product ft180 MHz
gain bandwidth product ft:180 MHz
height1 mm
категорияЭлектронные компоненты/Транзисторы
length3.05 mm
manufacturerDiodes Incorporated
manufacturer:Diodes Incorporated
maximum collector base voltage20 V
maximum collector emitter voltage-20 V
maximum dc collector current-1.5 A
maximum dc collector current:1.5 A
maximum emitter base voltage5 V
maximum operating frequency180 MHz
maximum operating temperature+150 °C
maximum operating temperature:+150 C
maximum power dissipation625 mW
minimum dc current gain300
minimum operating temperature-55 C
minimum operating temperature:-55 C
mounting styleSMD/SMT
mounting style:SMD/SMT
mounting typeSurface Mount
number of elements per chip1
package / caseSOT-23-3
package / case:SOT-23-3
package typeSOT-23
packagingReel
партномер8004841689
pd - power dissipation625 mW
pd - power dissipation:625 mW
pin count3
product categoryBipolar Transistors-BJT
product category:Bipolar Transistors-BJT
product type:BJTs-Bipolar Transistors
rohsDetails
seriesFMMT718
series:FMMT718
subcategory:Transistors
technology:Si
transistor configurationSingle
transistor polarityPNP
transistor polarity:PNP
transistor typePNP
Время загрузки22:30:32
width1.4 mm
Отзывов нет
Меню
0Корзина
Товар добавлен в корзину!
Товар добавлен в список сравнения
Товар добавлен в список избранных
Профиль