FMMT495TA, NPN Ic=1A Vceo=150V hfe=100~300 P=500mW SOT23

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Артикул: FMMT495TA
Электронные компоненты Транзисторы Биполярные (BJTs) Diodes FMMT495TA, NPN Ic=1A Vceo=150V hfe=100~300 ...
Дата загрузки22.02.2024
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вес, г0.197
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ПроизводительDIODES INC.
БрендDIODES INC.
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Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJTTRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:150V; Transition Frequency ft:100MHz; Power Dissipation Pd:500mW; DC Collector Current:1A; DC Current Gain hFE:100hFE; Transistor Case Style:SOT-23; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on):200mV; Continuous Collector Current Ic Max:1A; Current Ic Continuous a Max:1A; Current Ic hFE:250mA; Gain Bandwidth ft Min:100MHz; Gain Bandwidth ft Typ:100MHz; Hfe Min:100; No. of Transistors:1; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Power Dissipation Ptot Max:500mW; SMD Marking:495; Tape Width:8mm; Voltage Vcbo:170V
Дата загрузки22.02.2024
Вес и габариты
вес, г0.197
Информация о производителе
ПроизводительDIODES INC.
БрендDIODES INC.
Основные
collector- base voltage vcbo170 V
collector- base voltage vcbo:170 V
collector-emitter breakdown voltage150V
collector-emitter saturation voltage0.3 V
collector-emitter saturation voltage:300 mV
collector- emitter voltage vceo max150 V
collector- emitter voltage vceo max:150 V
configurationSingle
configuration:Single
continuous collector current1 A
continuous collector current:1 A
emitter- base voltage vebo5 V
emitter- base voltage vebo:7 V
factory pack quantity3000
factory pack quantity: factory pack quantity:3000
gain bandwidth product ft100 MHz
gain bandwidth product ft:100 MHz
height1.1 mm
категорияЭлектронные компоненты/Транзисторы
length3 mm
manufacturerDiodes Incorporated
manufacturer:Diodes Incorporated
maximum collector base voltage170 V
maximum collector emitter voltage150 V
maximum dc collector current1A
maximum dc collector current:1 A
maximum emitter base voltage5 V
maximum operating temperature+150 C
maximum operating temperature:+150 C
maximum power dissipation200 mW
minimum dc current gain100
minimum operating temperature-55 C
minimum operating temperature:-55 C
mounting styleSMD/SMT
mounting style:SMD/SMT
mounting typeSurface Mount
number of elements per chip1
package / caseSOT-23-3
package / case:SOT-23-3
package typeSOT-23
packagingReel
партномер8003470585
pd - power dissipation500mW
pd - power dissipation:500 mW
pin count3
product categoryBipolar Transistors-BJT
product category:Bipolar Transistors-BJT
product type:BJTs-Bipolar Transistors
rohsDetails
seriesFMMT495
series:FMMT495
subcategory:Transistors
technology:Si
transistor configurationSingle
transistor polarityNPN
transistor polarity:NPN
transistor typeNPN
Время загрузки21:56:10
width1.4 mm
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