FCX493TA, Trans GP BJT NPN 100V 1A 1000mW 4-Pin(3+Tab) SOT-89 T/R
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Артикул: FCX493TA
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Diodes, Transistors and Thyristors\Bipolar Transistors\GP BJTTrans GP BJT NPN 100V 1A 1000mW 4-Pin(3+Tab) SOT-89 T/R
| Дата загрузки | 22.02.2024 |
| Вес и габариты | |
| вес, г | 1 |
| Информация о производителе | |
| Производитель | DIODES INC. |
| Бренд | DIODES INC. |
| Основные | |
| automotive | No |
| base product number | FCX493 -> |
| collector- base voltage vcbo: | 120 V |
| collector-emitter saturation voltage: | 600 mV |
| collector- emitter voltage vceo max: | 100 V |
| configuration | Single Dual Collector |
| configuration: | Single |
| continuous collector current: | 1 A |
| current - collector cutoff (max) | 100nA |
| current - collector (ic) (max) | 1A |
| dc current gain (hfe) (min) @ ic, vce | 100 @ 250mA, 10V |
| eccn | EAR99 |
| eccn (us) | EAR99 |
| emitter- base voltage vebo: | 5 V |
| eu rohs | Compliant |
| factory pack quantity: factory pack quantity: | 1000 |
| frequency - transition | 150MHz |
| gain bandwidth product ft: | 150 MHz |
| htsus | 8541.29.0075 |
| категория | Электронные компоненты/Транзисторы |
| lead shape | Flat |
| manufacturer: | Diodes Incorporated |
| material | Si |
| maximum base current (a) | 0.3 |
| maximum base emitter saturation voltage (v) | 1.15@100mA@1A |
| maximum collector base voltage | 120 V |
| maximum collector base voltage (v) | 120 |
| maximum collector cut-off current (na) | 100 |
| maximum collector-emitter saturation voltage (v) | 0.3@50mA@500mA|0.6@100mA@1A |
| maximum collector emitter voltage | 100 V |
| maximum collector-emitter voltage (v) | 100 |
| maximum dc collector current | 1 A |
| maximum dc collector current: | 1 A |
| maximum dc collector current (a) | 1 |
| maximum emitter base voltage | 5 V |
| maximum emitter base voltage (v) | 7 |
| maximum operating frequency | 150 MHz |
| maximum operating temperature | +150 °C |
| maximum operating temperature: | +150 C |
| maximum operating temperature (°c) | 150 |
| maximum power dissipation | 1 W |
| maximum power dissipation (mw) | 1000 |
| maximum transition frequency (mhz) | 150(Min) |
| minimum dc current gain | 100@1mA@10V|100@250mA@10V|60@500mA@10V|20@1A@10V |
| minimum operating temperature: | -65 C |
| minimum operating temperature (°c) | -65 |
| moisture sensitivity level (msl) | 1 (Unlimited) |
| mounting | Surface Mount |
| mounting style: | SMD/SMT |
| mounting type | Surface Mount |
| number of elements per chip | 1 |
| operating junction temperature (°c) | -65 to 150 |
| operating temperature | -65В°C ~ 150В°C (TJ) |
| package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
| package / case | TO-243AA |
| package / case: | SOT-89-3 |
| package type | SOT-89 |
| packaging | Tape and Reel |
| партномер | 8001011979 |
| part status | Active |
| pcb changed | 3 |
| pd - power dissipation: | 1 W |
| pin count | 4 |
| power - max | 1W |
| ppap | No |
| product category | Bipolar Power |
| product category: | Bipolar Transistors-BJT |
| product type: | BJTs-Bipolar Transistors |
| reach status | REACH Unaffected |
| rohs status | ROHS3 Compliant |
| series: | FCX49 |
| standard package name | SOT |
| subcategory: | Transistors |
| supplier device package | SOT-89-3 |
| supplier package | SOT-89 |
| tab | Tab |
| technology: | Si |
| transistor configuration | Single |
| transistor polarity: | NPN |
| transistor type | NPN |
| type | NPN |
| vce saturation (max) @ ib, ic | 600mV @ 100mA, 1A |
| voltage - collector emitter breakdown (max) | 100V |
| Время загрузки | 21:55:43 |
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Компания ООО "Телеметрия"
- Название организации: ООО "ТЕЛЕМЕТРИЯ" Юридический адрес организации: Российская Федерация, 664043, Иркутская область, г. Иркутск, ул. Маршала Конева, дом 38 ИНН 7536172565 КПП 381201001 ОГРН 1187536004215 Расчетный счет 40702810010000426573 Банк АО «Тинькофф Банк» БИК банка 044525974 ИНН банка 7710140679 Корреспондентский счет банка 30101810145250000974 Юридический адрес банка 127287, г. Москва, ул. Хуторская 2-я, д. 38А, стр. 26
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