Name: DN350T05-7, Trans GP BJT NPN 350V 0.5A 300mW 3-Pin SOT-23 T/R
SKU: DN350T05-7

Semiconductor - Discrete > Transistors > BJT - General Purpose

Подробное описание

Вес и габариты
collector- base voltage vcbo	350 V
collector-emitter saturation voltage	1 V
collector- emitter voltage vceo max	350 V

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Semiconductor - Discrete > Transistors > BJT - General Purpose

Вес и габариты
collector- base voltage vcbo	350 V
collector-emitter saturation voltage	1 V
collector- emitter voltage vceo max	350 V
configuration	Single
dc collector/base gain hfe min	15 at 100 mA, 10 V
emitter- base voltage vebo	5 V
factory pack quantity	3000
gain bandwidth product ft	50 MHz
manufacturer	Diodes Incorporated
maximum dc collector current	500 mA
maximum operating temperature	+150 C
minimum operating temperature	-55 C
mounting style	SMD/SMT
package / case	SOT-23-3
packaging	Cut Tape or Reel
pd - power dissipation	300 mW
product category	Bipolar Transistors-BJT
product type	BJTs-Bipolar Transistors
series	DN350
subcategory	Transistors
transistor polarity	NPN

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