Name: DMMT5551-7-F, Trans GP BJT NPN 160V 0.2A 300mW 6-Pin SOT-26 T/R
SKU: DMMT5551-7-F

Semiconductor - Discrete > Transistors > BJT - General PurposeTrans GP BJT NPN 160V 0.2A 300mW 6-Pin SOT-26 T/R

Подробное описание

Вес и габариты
automotive	No
collector-emitter breakdown voltage	160V
configuration	Dual

14 ₽

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Бонус: 0.28 !

Бонусная программа

Итого: 14 ₽

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Semiconductor - Discrete > Transistors > BJT - General PurposeTrans GP BJT NPN 160V 0.2A 300mW 6-Pin SOT-26 T/R

Вес и габариты
automotive	No
collector-emitter breakdown voltage	160V
configuration	Dual
eccn (us)	ear99
eu rohs	compliant
lead shape	Gull-wing
maximum base emitter saturation voltage (v)	1 5mA 50mA\|1 1mA 10mA
maximum collector base voltage (v)	180
maximum collector cut-off current (na)	50
maximum collector-emitter saturation voltage (v)	0.2 5mA 50mA\|0.15 1mA 10mA
maximum collector-emitter voltage (v)	160
maximum dc collector current	200mA
maximum dc collector current (a)	0.2
maximum emitter base voltage (v)	6
maximum operating temperature (°c)	150
maximum power dissipation (mw)	300
maximum transition frequency (mhz)	300
minimum dc current gain	30 50mA 5V\|80 10mA 5V\|80 1mA 5V
minimum operating temperature (°c)	-55
mounting	surface mount
number of elements per chip	2
packaging	Tape and Reel
part status	active
pcb changed	6
pd - power dissipation	300mW
pin count	6
ppap	No
product category	Bipolar Small Signal
standard package name	SOT
supplier package	SOT-26
transistor type	2 NPNпј€Doubleпј‰Pairing
type	NPN

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