D44VH10G, Bipolar Transistors - BJT 15A 80V 83W NPN

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Артикул: D44VH10G
Электронные компоненты Транзисторы Биполярные (BJTs) ON Semiconductor D44VH10G, Bipolar Transistors - BJT 15A 80V ...
ON Semiconductor***
Дата загрузки21.02.2024
Вес и габариты
вес, г6
Информация о производителе
ПроизводительON Semiconductor***
БрендON Semiconductor***
270
+
Бонус: 5.4 !
Бонусная программа
Итого: 270
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Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJTTRANSISTOR, NPN, TO-220; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:50MHz; Power Dissipation Pd:83W; DC Collector Current:15A; DC Current Gain hFE:35hFE; Transistor Case Style:TO-220AB; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:Lead (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):400mV; Current Ic Continuous a Max:15A; Gain Bandwidth ft Typ:50MHz; Hfe Min:20; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Through Hole
Дата загрузки21.02.2024
Вес и габариты
вес, г6
Информация о производителе
ПроизводительON Semiconductor***
БрендON Semiconductor***
Основные
collector- base voltage vcbo80 V
collector-emitter saturation voltage0.8 V
collector-emitter saturation voltage:800 mV
collector- emitter voltage vceo max80 V
collector- emitter voltage vceo max:80 V
configurationSingle
configuration:Single
continuous collector current15 A
continuous collector current:15 A
dc collector/base gain hfe min35
dc collector/base gain hfe min:35
emitter- base voltage vebo7 V
emitter- base voltage vebo:7 V
factory pack quantity50
factory pack quantity: factory pack quantity:50
gain bandwidth product ft50 MHz
gain bandwidth product ft:50 MHz
height15.75 mm
категорияЭлектронные компоненты/Транзисторы
length10.53 mm
manufacturerON Semiconductor
manufacturer:onsemi
maximum collector emitter voltage80 V
maximum dc collector current15 A
maximum dc collector current:15 A
maximum emitter base voltage7 V
maximum operating frequency20 MHz
maximum operating temperature+150 C
maximum operating temperature:+150 C
maximum power dissipation83 W
minimum dc current gain20
minimum operating temperature-55 C
minimum operating temperature:-55 C
mounting styleThrough Hole
mounting style:Through Hole
mounting typeThrough Hole
number of elements per chip1
package / caseTO-220-3
package/case:TO-220-3
package typeTO-220AB
packagingTube
packaging:Tube
партномер8004651412
pd - power dissipation83 W
pd - power dissipation:83 W
pin count3
product categoryBipolar Transistors-BJT
product category:Bipolar Transistors-BJT
product type:BJTs-Bipolar Transistors
rohsDetails
seriesD44VH
series:D44VH
subcategory:Transistors
technology:Si
transistor configurationSingle
transistor polarityNPN
transistor polarity:NPN
transistor typeNPN
unit weight0.211644 oz
Время загрузки0:55:35
width4.83 mm
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