Name: D44H8G, Trans GP BJT NPN 60V 10A 2000mW 3-Pin(3+Tab) TO-220AB Tube
Brand: ON Semiconductor***
SKU: D44H8G

Электронные компоненты Транзисторы Биполярные (BJTs) ON Semiconductor D44H8G, Trans GP BJT NPN 60V 10A 2000mW ...

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120 ₽

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Semiconductor - Discrete > Transistors > BJT - General PurposeTrans GP BJT NPN 60V 10A 2000mW 3-Pin(3+Tab) TO-220AB Tube

Дата загрузки	20.02.2024
Вес и габариты
вес, г	1
Информация о производителе
Производитель	ON Semiconductor***
Бренд	ON Semiconductor***
Основные
automotive	No
configuration	Single
eccn (us)	EAR99
eu rohs	Compliant with Exemption
категория	Электронные компоненты/Транзисторы
lead shape	Through Hole
material	Si
maximum base emitter saturation voltage (v)	1.5@0.8A@8A
maximum collector-emitter saturation voltage (v)	1@0.4A@8A
maximum collector emitter voltage	60 V
maximum collector-emitter voltage (v)	60
maximum dc collector current	10 A
maximum dc collector current (a)	10
maximum emitter base voltage	5 V
maximum emitter base voltage (v)	5
maximum operating frequency	50 MHz
maximum operating temperature	+150 °C
maximum operating temperature (°c)	150
maximum power dissipation	2 W
maximum power dissipation (mw)	2000
maximum transition frequency (mhz)	50(Typ)
minimum dc current gain	40
minimum operating temperature (°c)	-55
mounting	Through Hole
mounting type	Through Hole
number of elements per chip	1
operating junction temperature (°c)	-55 to 150
package type	TO-220AB
packaging	Tube
партномер	8003813316
part status	Active
pcb changed	3
pin count	3
ppap	No
product category	Bipolar Power
standard package name	TO
supplier package	TO-220AB
tab	Tab
transistor configuration	Single
transistor type	NPN
type	NPN
Время загрузки	2:04:10

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