Discrete Semiconductor Products\Transistors - Bipolar (BJT) - SingleБиполярный (BJT) транзистор NPN 100V 2A 50MHz 1,75W Through Hole TO-202

Подробное описание

Вес и габариты
current - collector cutoff (max)	100nA (ICBO)
current - collector (ic) (max)	2A
dc current gain (hfe) (min) @ ic, vce	20 @ 500mA, 1V

830 ₽

– +

Бонус: 16.6 !

Бонусная программа

Итого: 830 ₽

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Discrete Semiconductor Products\Transistors - Bipolar (BJT) - SingleБиполярный (BJT) транзистор NPN 100V 2A 50MHz 1,75W Through Hole TO-202

Вес и габариты
current - collector cutoff (max)	100nA (ICBO)
current - collector (ic) (max)	2A
dc current gain (hfe) (min) @ ic, vce	20 @ 500mA, 1V
eccn	EAR99
frequency - transition	50MHz
htsus	8541.29.0075
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Through Hole
operating temperature	-65В°C ~ 150В°C (TJ)
package	Bulk
package / case	TO-202 Long Tab
power - max	1.75W
reach status	REACH Unaffected
rohs status	ROHS3 Compliant
supplier device package	TO-202
transistor type	NPN
vce saturation (max) @ ib, ic	350mV @ 25mA, 250mA
voltage - collector emitter breakdown (max)	100V

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CEN-U07 PBFREE