BSR33TA, Bipolar Transistors - BJT PNP Medium Power
Оставить отзыв
В избранноеВ сравнение
Артикул: BSR33TA
- Обзор
- Характеристики
- Отзывы (0)
- Реквизиты
Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT
| Дата загрузки | 22.02.2024 |
| Вес и габариты | |
| вес, г | 0.05 |
| Информация о производителе | |
| Производитель | DIODES INC. |
| Бренд | DIODES INC. |
| Основные | |
| aec qualified number | AEC-Q101 |
| automotive | Yes |
| collector- base voltage vcbo | -90 V |
| collector- base voltage vcbo: | 90 V |
| collector-emitter saturation voltage | -0.5 V |
| collector-emitter saturation voltage: | 500 mV |
| collector- emitter voltage vceo max | -80 V |
| collector- emitter voltage vceo max: | 80 V |
| configuration | Single Dual Collector |
| configuration: | Single |
| continuous collector current: | -1 A |
| eccn (us) | EAR99 |
| emitter- base voltage vebo | -5 V |
| emitter- base voltage vebo: | 5 V |
| eu rohs | Compliant |
| factory pack quantity | 1000 |
| factory pack quantity: factory pack quantity: | 1000 |
| gain bandwidth product ft | 100 MHz |
| gain bandwidth product ft: | 100 MHz |
| hts | 8541.29.00.95 |
| категория | Электронные компоненты/Транзисторы |
| lead shape | Flat |
| manufacturer | Diodes Incorporated |
| manufacturer: | Diodes Incorporated |
| material | Si |
| maximum base emitter saturation voltage (v) | 1.2@50mA@500mA|1@15mA@150mA |
| maximum collector base voltage (v) | 90 |
| maximum collector-emitter saturation voltage (v) | 0.5@50mA@500mA|0.25@15mA@150mA |
| maximum collector-emitter voltage (v) | 80 |
| maximum dc collector current | 1 A |
| maximum dc collector current: | 1 A |
| maximum dc collector current (a) | 1 |
| maximum emitter base voltage (v) | 5 |
| maximum operating temperature | +150 C |
| maximum operating temperature: | +150 C |
| maximum operating temperature (°c) | 150 |
| maximum power dissipation (mw) | 2100 |
| maximum transition frequency (mhz) | 100(Min) |
| military | No |
| minimum dc current gain | 100@100mA@5V|50@500mA@5V|30@100uA@5V |
| minimum operating temperature | -65 C |
| minimum operating temperature: | -65 C |
| minimum operating temperature (°c) | -65 |
| mounting | Surface Mount |
| mounting style | SMD/SMT |
| mounting style: | SMD/SMT |
| number of elements per chip | 1 |
| package / case | SOT-89-3 |
| package / case: | SOT-89-3 |
| package height | 1.6(Max) |
| package length | 4.6(Max) |
| package width | 2.6(Max) |
| packaging | Tape and Reel |
| партномер | 8004841613 |
| part status | Active |
| pcb changed | 3 |
| pd - power dissipation | 1 W |
| pd - power dissipation: | 1 W |
| pin count | 4 |
| product category | Bipolar Power |
| product category: | Bipolar Transistors-BJT |
| product type | BJTs-Bipolar Transistors |
| product type: | BJTs-Bipolar Transistors |
| series | BSR33 |
| series: | BSR33 |
| standard package name | SOT |
| subcategory | Transistors |
| subcategory: | Transistors |
| supplier package | SOT-89 |
| tab | Tab |
| technology: | Si |
| transistor polarity | PNP |
| transistor polarity: | PNP |
| type | PNP |
| Время загрузки | 22:23:46 |
Отзывов нет
Компания ООО "Телеметрия"
- Название организации: ООО "ТЕЛЕМЕТРИЯ" Юридический адрес организации: Российская Федерация, 664043, Иркутская область, г. Иркутск, ул. Маршала Конева, дом 38 ИНН 7536172565 КПП 381201001 ОГРН 1187536004215 Расчетный счет 40702810010000426573 Банк АО «Тинькофф Банк» БИК банка 044525974 ИНН банка 7710140679 Корреспондентский счет банка 30101810145250000974 Юридический адрес банка 127287, г. Москва, ул. Хуторская 2-я, д. 38А, стр. 26
![2SC3420-GR, Транзистор NPN 20В 5А 1.5Вт [TO-126F]](/wa-data/public/shop/products/04/04/300404/images/351600/351600.300x0.jpg "2SC3420-GR, Транзистор NPN 20В 5А 1.5Вт [TO-126F]")
![2SA1013-Y, Транзистор PNP 160В 1А 0.9Вт [TO-92LM]](/wa-data/public/shop/products/03/04/300403/images/351599/351599.300x0.jpg "2SA1013-Y, Транзистор PNP 160В 1А 0.9Вт [TO-92LM]")
