BSC077N12NS3GATMA1, Trans MOSFET N-CH 120V 13.4A Automotive 8-Pin TDSON EP T/R
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Артикул: BSC077N12NS3GATMA1
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Semiconductor - Discrete > Transistors > FET - MOSFETInfineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families.
| Дата загрузки | 22.02.2024 |
| Вес и габариты | |
| вес, г | 1 |
| Информация о производителе | |
| Производитель | INFINEON TECHNOLOGIES AG. |
| Бренд | INFINEON TECHNOLOGIES AG. |
| Основные | |
| channel mode | Enhancement |
| channel mode: | Enhancement |
| channel type | N |
| configuration | 1 N-Channel |
| configuration: | Single |
| factory pack quantity | 5000 |
| factory pack quantity: factory pack quantity: | 5000 |
| fall time | 7 ns |
| fall time: | 7 ns |
| forward transconductance - min | 40 S |
| forward transconductance - min: | 40 S |
| height | 1.27 mm |
| id - continuous drain current | 98 A |
| id - continuous drain current: | 98 A |
| категория | Электронные компоненты/Транзисторы |
| length | 5.9 mm |
| manufacturer | Infineon |
| manufacturer: | Infineon |
| maximum continuous drain current | 98 A |
| maximum drain source resistance | 7.7 mΩ |
| maximum drain source voltage | 120 V |
| maximum gate source voltage | -20 V, +20 V |
| maximum gate threshold voltage | 4V |
| maximum operating temperature | +150 C |
| maximum operating temperature: | +150 C |
| maximum power dissipation | 139 W |
| minimum gate threshold voltage | 2V |
| minimum operating temperature | -55 C |
| minimum operating temperature: | -55 C |
| mounting style | SMD/SMT |
| mounting style: | SMD/SMT |
| mounting type | Surface Mount |
| number of channels | 1 Channel |
| number of channels: | 1 Channel |
| number of elements per chip | 1 |
| package / case | TDSON-8 |
| package / case: | TDSON-8 |
| package type | TDSON |
| packaging | Reel |
| партномер | 8021374716 |
| part # aliases | BSC077N12NS3 BSC077N12NS3GXT G SP000652750 |
| part # aliases: | BSC077N12NS3 G SP000652750 |
| pd - power dissipation | 139 W |
| pd - power dissipation: | 139 W |
| pin count | 8 |
| product category | MOSFET |
| product category: | MOSFET |
| product type: | MOSFET |
| qg - gate charge | 88 nC |
| qg - gate charge: | 66 nC |
| rds on - drain-source resistance | 6.6 mOhms |
| rds on - drain-source resistance: | 7.7 mOhms |
| rise time | 8 ns |
| rise time: | 8 ns |
| rohs | Details |
| series | BSC077N12 |
| series: | OptiMOS 3 |
| subcategory: | MOSFETs |
| technology | Si |
| technology: | Si |
| tradename | OptiMOS |
| tradename: | OptiMOS |
| transistor configuration | Single |
| transistor polarity | N-Channel |
| transistor polarity: | N-Channel |
| transistor type | 1 N-Channel |
| transistor type: | 1 N-Channel |
| typical gate charge @ vgs | 66 nC @ 10 V |
| typical turn-off delay time | 26 ns |
| typical turn-off delay time: | 26 ns |
| typical turn-on delay time | 15 ns |
| typical turn-on delay time: | 15 ns |
| vds - drain-source breakdown voltage | 120 V |
| vds - drain-source breakdown voltage: | 120 V |
| vgs - gate-source voltage | 20 V |
| vgs - gate-source voltage: | -20 V, +20 V |
| vgs th - gate-source threshold voltage | 2 V |
| vgs th - gate-source threshold voltage: | 2 V |
| Время загрузки | 3:15:54 |
| width | 5.15 mm |
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Компания ООО "Телеметрия"
- Название организации: ООО "ТЕЛЕМЕТРИЯ" Юридический адрес организации: Российская Федерация, 664043, Иркутская область, г. Иркутск, ул. Маршала Конева, дом 38 ИНН 7536172565 КПП 381201001 ОГРН 1187536004215 Расчетный счет 40702810010000426573 Банк АО «Тинькофф Банк» БИК банка 044525974 ИНН банка 7710140679 Корреспондентский счет банка 30101810145250000974 Юридический адрес банка 127287, г. Москва, ул. Хуторская 2-я, д. 38А, стр. 26
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