Name: Bipolar junction transistor, PNP, -600 mA, -60 V, THT, TO-18, 2N2907A
Brand: Comset Semiconductors
SKU: 2N2907A

Электронные компоненты Транзисторы Биполярные (BJTs) Comset Bipolar junction transistor, PNP, -600 mA ...

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270 ₽

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Бонус: 5.4 !

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Итого: 270 ₽

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Semiconductors\Power SemiconductorsБиполярный (BJT) транзистор PNP 60V 600mA 200MHz 400mW Through Hole TO-18

Дата загрузки	23.02.2024
Информация о производителе
Производитель	Comset Semiconductors
Бренд	Comset Semiconductors
Основные
automotive	No
configuration	Single
current - collector cutoff (max)	10nA (ICBO)
current - collector (ic) (max)	600mA
dc current gain (hfe) (min) @ ic, vce	100 @ 150mA, 10V
eccn	EAR99
frequency - transition	200MHz
htsus	8541.21.0075
категория	Электронные компоненты/Транзисторы
maximum power dissipation - (mw)	1800
military	No
minimum dc current gain	75@100uA@10VI100@1mA@10VI100@10mA@10VI100@150mA@10VI50@500mA@10V
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Through Hole
number of elements per chip	1
operating temperature	-65В°C ~ 200В°C (TJ)
operating temperature - (??c)	-65~200
package	Bulk
package / case	TO-206AA, TO-18-3 Metal Can
packaging	Box
партномер	8026535633
pin count	3
power - max	400mW
reach status	REACH Unaffected
rohs status	ROHS3 Compliant
simulation models	http://www.centralsemi.com/docs/csm/2N2907A.LIB
standard package name	TO-206-AA
supplier device package	TO-18
supplier package	TO-18
transistor type	PNP
vce saturation (max) @ ib, ic	1.6V @ 50mA, 500mA
voltage - collector emitter breakdown (max)	60V
Время загрузки	0:24:58

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