BFU520AR, RF Bipolar Transistors Dual NPN wideband Silicon RFtransistor

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Артикул: BFU520AR
Электронные компоненты Транзисторы Биполярные (BJTs) NXP BFU520AR, RF Bipolar Transistors Dual NPN ...
Дата загрузки21.02.2024
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вес, г0.01
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ПроизводительNXP Semiconductor
БрендNXP Semiconductor
190
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Semiconductors\Discrete Semiconductors\Transistors\RF TransistorsBFU5x NPN Wideband Silicon RF TransistorsNexperia BFU5x NPN Wideband Silicon RF Transistors are AEC-Q101 qualified, low noise, high breakdown RF transistors suitable for small signal to medium power applications up to 2GHz. Offering exceptional performance, BFU5x RF Transistors generate 20dB of maximum gain and a noise figure of 0.7dB at 900MHz. These devices allow for better signal reception at low to medium power and enable RF receivers to operate more robustly in noisy environments. When used as (low-noise) amplifiers or oscillators, BFU5x RF Transistors support high supply voltages and high breakdown voltages. This makes these devices well-suited for automotive, communication, and industrial applications. The product family is available in a wide range of industry-standard packages, including SOT323, SOT23, and SOT143.
Дата загрузки21.02.2024
Вес и габариты
вес, г0.01
Информация о производителе
ПроизводительNXP Semiconductor
БрендNXP Semiconductor
Основные
collector- base voltage vcbo24 V
collector- base voltage vcbo:24 V
collector- emitter voltage vceo max16 V
collector- emitter voltage vceo max:16 V
configurationDual
configuration:Single
continuous collector current5 mA
continuous collector current:5 mA
dc collector/base gain hfe min60
dc collector/base gain hfe min:60
dc current gain hfe max200
dc current gain hfe max:200
emitter- base voltage vebo2 V
emitter- base voltage vebo:2 V
factory pack quantity3000
factory pack quantity: factory pack quantity:3000
gain bandwidth product ft10 GHz
gain bandwidth product ft:10 GHz
категорияЭлектронные компоненты/Транзисторы
manufacturerNXP
manufacturer:NXP
maximum dc collector current50 mA
maximum dc collector current:50 mA
maximum operating temperature+150 C
maximum operating temperature:+150 C
minimum operating temperature-40 C
minimum operating temperature:-40 C
mounting styleSMD/SMT
mounting style:SMD/SMT
operating frequency900 MHz
operating frequency:900 MHz
operating temperature range-40 C to+150 C
operating temperature range:-40 C to+150 C
package / caseSOT23-3
package / case:SOT-23-3
packagingReel
партномер8005510478
part # aliases:9,34068E+11
pd - power dissipation450 mW
pd - power dissipation:450 mW
product categoryRF Bipolar Transistors
product category:RF Bipolar Transistors
product type:RF Bipolar Transistors
rohsDetails
seriesNPI Part Build_RF Transistors
subcategory:Transistors
technologySi
technology:Si
transistor polarityNPN
transistor polarity:NPN
transistor typeBipolar Wideband
transistor type:Bipolar Wideband
typeWideband RF Transistor
type:Wideband RF Transistor
unit weight0.00031 oz
Время загрузки1:22:36
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