BFS483H6327XTSA1, RF Bipolar Transistors RF BIP TRANSISTOR
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RF TRANSISTOR, NPN, 12V, 8GHZ, SOT363; Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:12V; Transition Frequency ft:8GHz; Power Dissipation Pd:450mW; DC Collector Current:65mA; DC Current Gain hFE:70hFE; RF Transistor Case:SOT-363; No. of Pins:6Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 3 - 168 hours; SVHC:No SVHC (27-Jun-2018)
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