Name: BFR193L3E6327XTMA1, Trans RF BJT NPN 12V 0.08A 3-Pin TSLP T/R
SKU: BFR193L3E6327XTMA1

Semiconductor - Discrete > Transistors > RF BJT

Подробное описание

19 ₽

– +

Бонус: 0.38 !

Бонусная программа

Итого: 19 ₽

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Semiconductor - Discrete > Transistors > RF BJT

Вес и габариты
automotive	No
configuration	Single
eccn (us)	EAR99
eu rohs	Compliant
hts	8541.29.00.95
lead shape	No Lead
maximum collector base voltage (v)	20
maximum collector cut-off current (na)	100
maximum collector-emitter voltage range (v)	<20
maximum collector-emitter voltage (v)	12
maximum dc collector current (a)	0.08
maximum dc collector current range (a)	0.06 to 0.12
maximum emitter base voltage (v)	2
maximum emitter cut-off current (na)	1000
maximum noise figure (db)	1.6(Min)
maximum operating temperature (°c)	150
maximum power dissipation (mw)	580
maximum transition frequency (mhz)	8000(Typ)
military	No
minimum dc current gain	70@30mA@8V
minimum dc current gain range	50 to 120
minimum operating temperature (°c)	-55
mounting	Surface Mount
number of elements per chip	1
operational bias conditions	8V/30mA
package height	0.45(Max)
package length	1
package width	0.6
packaging	Tape and Reel
part status	Active
pcb changed	3
pin count	3
standard package name	TSLP
supplier package	TSLP
supplier temperature grade	Automotive
type	NPN
typical input capacitance (pf)	2.25
typical output capacitance (pf)	0.63
typical power gain (db)	19

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